Method of operating emitter for electron-beam projection lithography system

Abstract

An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

1 - 7 . (canceled)  
   
   
       8 . A method of operating an emitter for an electron-beam projection lithography system, the emitter including a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material, the method comprising: 
 applying a voltage between the base electrode and the gate electrode layer; and    projecting light onto a portion of the photoconductor substrate from the rear side of the emitter to convert a part of the photoconductor substrate into a conductor such that electrons are emitted only from the portion where the light is projected.    
   
   
       9 . The method as claimed in  claim 8 , wherein the light is from at least one of an ultraviolet light source and a laser.  
   
   
       10 . The method as claimed in  claim 8 , further comprising projecting light onto an entire surface of the substrate.  
   
   
       11 . The method as claimed in  claim 10 , wherein projecting light onto an entire surface of the substrate is prior to projecting light onto the portion of the substrate.  
   
   
       12 . The method as claimed in  claim 8 , wherein the portion includes more than one non-adjacent portion.  
   
   
       13 . The method as claimed in  claim 8 , further comprising varying at least one of an intensity and a wavelength of light.  
   
   
       14 - 23 . (canceled)  
   
   
       24 . The method as claimed in  claim 8 , wherein the gate electrode layer comprises relatively thick and thin portions.  
   
   
       25 . The method as claimed in  claim 8 , wherein the photoconductor substrate comprises at least one of a gallium arsenide substrate and an amorphous silicon substrate.  
   
   
       26 . The method as claimed in  claim 8 , wherein the insulating layer is formed of an anodized metal.  
   
   
       27 . The method as claimed in  claim 26 , wherein the insulating layer is formed of an anodized alumina.  
   
   
       28 . The method as claimed in  claim 27 , wherein the gate electrode layer is formed of a metal selected from the group consisting of gold (Au), palladium (Pd), titanium (Ti) and aluminum (Al).  
   
   
       29 . The method as claimed in  claim 8 , further comprising applying an acceleration voltage between an object substrate and the gate electrode layer.  
   
   
       30 . The method as claimed in  claim 8 , wherein projecting light includes providing a mask between a light source and the rear side of the emitter.