Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices

Abstract

One embodiment of the present invention is a method for fabricating a dielectric film, comprising chemical vapor depositing a dielectric film, and curing the dielectric film, wherein the dielectric film comprises silicon and carbon, and the chemical vapor depositing utilizes a precursor comprising one or more organo-silicon compounds and one or more carbon-carbon bond containing hydrocarbon compounds.

1 . A method for fabricating a dielectric film, comprising: 
 chemical vapor depositing a dielectric film; and    curing the dielectric film,    wherein the dielectric film comprises silicon and carbon, and the chemical vapor depositing utilizes a precursor comprising: 
 one or more organo-silicon compounds selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, ethylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, diethylsilane, propylsilane, vinylmethylsilane, 1,1,2,2-tetramethyldisilane, hexamethyldisilane, 1,1,2,2,3,3-hexamethyltrisilane, 1,1,2,3,3-pentamethyltrisilane, dimethyldisilanoethane, dimethyldisilanopropane, tetramethyldisilanoethane, tetramethyldisilanopropane, and 1,3,5-trisilano-2,4,6-trimethylene; and  
 one or more carbon-carbon bond containing hydrocarbon compounds selected from the group of ethylene, propylene, acetylene, butadiene, t-butylethylene, 1,1,3,3-teramethylbutylbenzene, t-butylether, methyle-methacrylate, and t-butyfurfurylether.  
   
     
     
         2 . The method of  claim 1 , wherein the dielectric film further comprises oxygen, and has a low dielectric constant value.  
     
     
         3 . The method of  claim 1 , wherein curing the dielectric film comprising thermally annealing the dielectric film.  
     
     
         4 . The method of  claim 1 , wherein the precursor further comprises one or more oxidizers.  
     
     
         5 . The method of  claim 4 , wherein one or more of the one or more oxidizers are selected from the group consisting of oxygen, ozone, nitrous oxide, carbon monoxide, carbon dioxide, water, hydrogen peroxide, and an oxygen-containing organic compound.  
     
     
         6 . The method of  claim 1 , wherein curing the dielectric film comprises using e-beam treating the dielectric film.  
     
     
         7 . The method of  claim 1 , wherein the dielectric film has a carbon content between about 10 to about 30 atomic percent, excluding hydrogen atoms.  
     
     
         8 . The method of  claim 1 , wherein the dielectric film is hydrophobic.  
     
     
         9 . The method of  claim 1 , wherein chemical vapor depositing the dielectric film comprising generating a plasma of the precursor.  
     
     
         10 . The method of  claim 1 , wherein the precursor comprising trimethylsilane and ethylene.