Semiconductor laser device and method of fabricating the same

Abstract

A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

1 - 18 . (canceled)  
     
     
         19 . A semiconductor laser device comprising: 
 an emission layer formed on a substrate;    a semiconductor layer formed on said emission layer while constituting a convex ridge portion;    a current blocking layer formed on a side of said ridge portion;    a first metal electrode formed to be in contact with the upper surface of said ridge portion; and    a second metal electrode, formed on said first metal electrode, superior in adhesiveness to said first metal electrode.    
     
     
         20 . The semiconductor laser device according to  claim 19 , wherein 
 said second metal electrode is formed to be in contact with said current blocking layer.    
     
     
         21 . The semiconductor laser device according to  claim 19 , wherein 
 said first metal electrode contains a dopant having the same conductivity type as said semiconductor layer constituting said ridge portion.    
     
     
         22 . The semiconductor laser device according to  claim 21 , wherein 
 said semiconductor layer constituting said ridge portion consists of a group III-V compound semiconductor, and    said dopant, contained in said first metal electrode, having the same conductivity type as said semiconductor layer constituting said ridge portion includes at least one element selected from a group consisting of Zn, Cd, Be, Mg, Ca and Ba.    
     
     
         23 . The semiconductor laser device according to  claim 19 , wherein 
 the sum of the thicknesses of said first metal electrode and said second metal electrode is at least 5 μm.    
     
     
         24 - 26 . (canceled)