Hinge assembly for a digital micromirror device

Abstract

An apparatus for use with a digital micromirror device includes a hinge layer that is disposed outwardly from a substrate. The hinge layer including a hinge that is capable of at least partially supporting a micromirror that is disposed outwardly from the hinge. In one particular embodiment, the hinge and the substrate are separated by a first air gap. The device also including a first hinge support that is disposed outwardly from the substrate and inwardly from at least a portion of the hinge layer. The first hinge support being capable of transmitting a voltage to the hinge. At least a portion of the hinge support coupled to at least the portion of the hinge layer. In one particular embodiment, the first hinge support is formed in a process step that is different than a process step that forms the hinge layer.

1 . An apparatus for use with a digital micromirror device, comprising: 
 a hinge layer disposed outwardly from a substrate, the hinge layer comprising a hinge capable of at least partially supporting a micromirror disposed outwardly from the hinge, wherein the hinge and the substrate are separated by a first air gap;    a first hinge support disposed outwardly from the substrate and inwardly from at least a portion of the hinge layer, the first hinge support capable of transmitting a voltage to the hinge, wherein at least a portion of the hinge support couples to at least the portion of the hinge layer and wherein the first hinge support is formed in a process step that is different than a process step that forms the hinge layer.    
   
   
       2 . The apparatus of  claim 1 , wherein the process step that forms the first hinge support is before the process step that forms the hinge layer.  
   
   
       3 . The apparatus of  claim 1 , wherein the at least the portion of the hinge support is coupled to and in contact with the at least the portion of the hinge layer.  
   
   
       4 . The apparatus of  claim 1 , wherein at least a majority of the first hinge support comprises a height of approximately at least the first air gap and wherein a majority of a cross-section of the first hinge support comprises a substantially conductive material.  
   
   
       5 . The apparatus of  claim 1 , further comprising a second hinge support disposed outwardly from the substrate and inwardly from at least another portion of the hinge layer and wherein a combination of the first and second hinge supports are disposed inwardly from and in contact with at least a majority of the hinge layer.  
   
   
       6 . The apparatus of  claim 1 , further comprising one or more electrodes formed outwardly from the substrate and inwardly from the micromirror, the one or more electrodes operable to receive a control voltage.  
   
   
       7 . The apparatus of  claim 1 , wherein the first hinge support comprises a plurality of conductive layers.  
   
   
       8 . The apparatus of  claim 1 , wherein the substrate comprises control circuitry capable of selectively transitioning the micromirror between an on-state position and an off-state position.  
   
   
       9 . The apparatus of  claim 1 , wherein the micromirror is capable of being selectively transitioned between an on-state position and an off-state position based at least in part on the voltage received by the first hinge support.  
   
   
       10 . An apparatus for use with a digital micromirror device, comprising: 
 a hinge layer disposed outwardly from a substrate, the hinge layer comprising a hinge capable of at least partially supporting a micromirror disposed outwardly from the hinge, wherein the hinge and the substrate are separated by a first air gap;    a first hinge support disposed outwardly from the substrate and inwardly from at least a portion of the hinge layer, the first hinge support capable of transmitting a voltage to the hinge, wherein at least a majority of the first hinge support comprises a height of approximately at least the first air gap and wherein a majority of a cross-section of the first hinge support comprises a substantially conductive material.    
   
   
       11 . The apparatus of  claim 10 , wherein at least a portion of the hinge support is disposed inwardly from and in contact with the at least the portion of the hinge layer.  
   
   
       12 . The apparatus of  claim 10 , further comprising a second hinge support disposed outwardly from the substrate and inwardly from at least another portion of the hinge layer and wherein a combination of the first and second hinge supports are disposed inwardly from and in contact with at least a majority of the hinge layer.  
   
   
       13 . The apparatus of  claim 10 , further comprising one or more electrodes formed outwardly from the substrate and inwardly from the micromirror, the one or more electrodes operable to receive a control voltage.  
   
   
       14 . A method of forming an apparatus for use with a MEMS device, comprising: 
 forming a first conductive layer disposed outwardly from a substrate, the first conductive layer comprising a height;    forming a first hinge support and a second hinge support within the first conductive layer, the first and second hinge supports each comprising a height of approximately the height of the first conductive layer;    forming a spacer layer by disposing a spacer material outwardly from the substrate and between the first and second hinge supports, the spacer layer comprising a height of no more than the height of the first conductive layer; and    forming a hinge layer disposed outwardly from at least a portion of the first hinge support and at least a portion of the spacer layer, the hinge layer comprising a hinge capable of at least partially supporting a micromirror disposed outwardly from the hinge, wherein the hinge layer is formed in a process step that is different than a process step that forms the first hinge support.    
   
   
       15 . The method of  claim 14 , wherein forming the first hinge support is before forming the hinge layer.  
   
   
       16 . The method of  claim 14 , wherein the at least the portion of the first hinge support is disposed inwardly from and in contact with the at least the portion of the hinge layer.  
   
   
       17 . The method of  claim 14 , wherein at least a majority of the first hinge support comprises the height of approximately the height of the first conductive layer and wherein a majority of a cross-section of the first hinge support comprises a substantially conductive material.  
   
   
       18 . The method of  claim 14 , wherein a combination of the first and second hinge supports are disposed inwardly from and in contact with at least a majority of the hinge layer.  
   
   
       19 . The method of  claim 14 , wherein forming the spacer layer comprises: 
 removing at least a portion of the first conductive layer;    depositing a sacrificial material; and    polishing the sacrificial material.    
   
   
       20 . The method of  claim 14 , further comprising selectively removing at least a portion of the spacer layer disposed inwardly from the hinge.