Thin Semiconductor Device And Operation Method Of Thin Semiconductor Device

Abstract

The present invention provides a thin semiconductor device in which its security such as prevention of counterfeit or information leakage is to be enhanced. One feature of the present invention is a thin semiconductor device in which a plurality of thin film integrated circuits are mounted and in which at least one integrated circuit is different from the other integrated circuits in any one of a specification, layout, frequency for transmission or reception, a memory, a communication means, a communication rule and the like. According to the present invention, a thin semiconductor device tag having the plurality of thin film integrated circuits communicates with a reader/writer and at least one of the thin film integrated circuits receives a signal to write information in a memory, and the information written in the memory determines which of the thin film integrated circuits communicates.

1 . A thin semiconductor device comprising: 
 a plurality of thin film integrated circuits provided with a semiconductor film of 40 nm to 170 nm thick,    wherein at least one integrated circuit is different from the other integrated circuits in any of a shape and a layout of an antenna, frequency, a communication means, and a communication rule.    
   
   
       2 . A thin semiconductor device comprising: 
 a plurality of thin film integrated circuits provided with an antenna and a semiconductor film of 40 nm to 170 nm thick,    wherein at least one integrated circuit is different from the other integrated circuits in any of a shape and a layout of an antenna, frequency, a communication means, and a communication rule.    
   
   
       3 . A thin semiconductor device comprising: 
 a plurality of thin film integrated circuits provided with an antenna, a memory and a semiconductor film of 40 nm to 170 nm thick,    wherein at least one integrated circuit is different from the other integrated circuits in any of a shape and a layout of an antenna, frequency, a communication means, and a communication rule.    
   
   
       4 . The thin semiconductor device according to  claim 3 , wherein the plurality of thin film integrated circuits shares the memory.  
   
   
       5 . The thin semiconductor device according to  claim 3 , wherein the memory is any one of a nonvolatile memory, a ROM, a mask ROM, a flash memory, an FRAM, an EPROM, an EEPROM, a DRAM and an SRAM.  
   
   
       6 . The thin semiconductor device according to  claim 2 , wherein the antennas of the plurality of thin film integrated circuits are different in length from one another.  
   
   
       7 . The thin semiconductor device according to  claim 3 , wherein the antennas of the plurality of thin film integrated circuits are different in length from one another.  
   
   
       8 . The thin semiconductor device according to  claim 2 , wherein the antenna is integrated over the semiconductor film.  
   
   
       9 . The thin semiconductor device according to  claim 3 , wherein the antenna is integrated over the semiconductor film.  
   
   
       10 . The thin semiconductor device according to  claim 1 , wherein the mode of the thin film integrated circuit includes a central processing unit, a memory and a layout of an antenna of the thin film integrated circuit.  
   
   
       11 . The thin semiconductor device according to  claim 2 , wherein the mode of the thin film integrated circuit includes a central processing unit, a memory and a layout of an antenna of the thin film integrated circuit.  
   
   
       12 . The thin semiconductor device according to  claim 3 , wherein the mode of the thin film integrated circuit includes a central processing unit, a memory and a layout of an antenna of the thin film integrated circuit.  
   
   
       13 . The thin semiconductor device according to  claim 1 , wherein the frequency is any of a sub millimeter wave 300 GHz to 3 THz, an extremely-high-frequency wave 30 GHz to 300 GHz, a super-high-frequency wave 3 GHz to 30 GHz, an ultra-high-frequency wave 300 MHz to 3 GHz, a very-high-frequency 30 MHz to 300 MHz, a high-frequency wave 3 MHz to 30 MHz, a medium-frequency wave 300 KHz to 3 MHz, a long-frequency wave 30 KHz to 300 KHz and a very-long frequency wave 3 KHz to 30 KHz.  
   
   
       14 . The thin semiconductor device according to  claim 2 , wherein the frequency is any of a sub millimeter wave 300 GHz to 3 THz, an extremely-high-frequency wave 30 GHz to 300 GHz, a super-high-frequency wave 3 GHz to 30 GHz, an ultra-high-frequency wave 300 MHz to 3 GHz, a very-high-frequency 30 MHz to 300 MHz, a high-frequency wave 3 MHz to 30 MHz, a medium-frequency wave 300 KHz to 3 MHz, a long-frequency wave 30 KHz to 300 KHz and a very-long frequency wave 3 KHz to 30 KHz.  
   
   
       15 . The thin semiconductor device according to  claim 3 , wherein the frequency is any of a sub millimeter wave 300 GHz to 3 THz, an extremely-high-frequency wave 30 GHz to 300 GHz, a super-high-frequency wave 3 GHz to 30 GHz, an ultra-high-frequency wave 300 MHz to 3 GHz, a very-high-frequency 30 MHz to 300 MHz, a high-frequency wave 3 MHz to 30 MHz, a medium-frequency wave 300 KHz to 3 MHz, a long-frequency wave 30 KHz to 300 KHz and a very-long frequency wave 3 KHz to 30 KHz.  
   
   
       16 . The thin semiconductor device according to  claim 1 , wherein the communication means is a digital modulation system and is any one of amplitude shift keying, frequency shift keying and phase shift keying.  
   
   
       17 . The thin semiconductor device according to  claim 2 , wherein the communication means is a digital modulation system and is any one of amplitude shift keying, frequency shift keying and phase shift keying.  
   
   
       18 . The thin semiconductor device according to  claim 3 , wherein the communication means is a digital modulation system and is any one of amplitude shift keying, frequency shift keying and phase shift keying.  
   
   
       19 . The thin semiconductor device according to  claim 1 , wherein the communication means is an analog modulation system and is any of amplitude modulation, frequency modulation and phase modulating.  
   
   
       20 . The thin semiconductor device according to  claim 2 , wherein the communication means is an analog modulation system and is any of amplitude modulation, frequency modulation and phase modulating.  
   
   
       21 . The thin semiconductor device according to  claim 3 , wherein the communication means is an analog modulation system and is any of amplitude modulation, frequency modulation and phase modulating.  
   
   
       22 . The thin semiconductor device according to  claim 1 , wherein the communication means is either of one-way communication and two-way communication, and is any of a space division multiplex access method, a polarization division multiplex access method, a frequency-division multiplex access method, a time-division multiplex access method, a code division multiplex access method and an orthogonal frequency division multiplexing method.  
   
   
       23 . The thin semiconductor device according to  claim 2 , wherein the communication means is either of one-way communication and two-way communication, and is any of a space division multiplex access method, a polarization division multiplex access method, a frequency-division multiplex access method, a time-division multiplex access method, a code division multiplex access method and an orthogonal frequency division multiplexing method.  
   
   
       24 . The thin semiconductor device according to  claim 3 , wherein the communication means is either of one-way communication and two-way communication, and is any of a space division multiplex access method, a polarization division multiplex access method, a frequency-division multiplex access method, a time-division multiplex access method, a code division multiplex access method and an orthogonal frequency division multiplexing method.  
   
   
       25 . The thin semiconductor device according to  claim 1  is a card.  
   
   
       26 . The thin semiconductor device according to  claim 2  is a card.  
   
   
       27 . The thin semiconductor device according to  claim 3  is a card.  
   
   
       28 . A thin semiconductor device having a plurality of thin film integrated circuits provided with a semiconductor film of 40 nm to 170 nm thick, the thin semiconductor device comprising: 
 an antenna by which at least one thin film integrated circuit of the plurality of thin film integrated circuits receives a signal transmitted from a reader/writer;    a memory into which information is written by the received signal; and    an electronic key in which information about which of the plurality of thin film integrated circuits communicates, is input.    
   
   
       29 . A thin semiconductor device having a plurality of thin film integrated circuits provided with a semiconductor film of 40 nm to 170 nm thick, the thin semiconductor device comprising: 
 an antenna by which at least one thin film integrated circuit of the plurality of thin film integrated circuits receives a signal transmitted from a reader/writer;    a memory into which information is written by the received signal;    an electronic key in which information about which of the plurality of thin film integrated circuits communicates, is input; and    a control circuit for controlling which of the plurality of thin film integrated circuits communicates.    
   
   
       30 . The thin semiconductor device according to  claim 29 , wherein the control circuit controls writing in and readout from the memory depending on the electronic key.  
   
   
       31 . The thin semiconductor device according to  claim 28 , wherein the electronic key is updated by the signal which has been received by the thin film integrated circuit.  
   
   
       32 . The thin semiconductor device according to  claim 29 , wherein the electronic key is updated by the signal which has been received by the thin film integrated circuit.  
   
   
       33 . The thin semiconductor device according to  claim 28 , wherein at least one thin film integrated circuit of the plurality of thin film integrated circuits receives a signal depending on a frequency transmitted from the reader/writer.  
   
   
       34 . The thin semiconductor device according to  claim 29 , wherein at least one thin film integrated circuit of the plurality of thin film integrated circuits receives a signal depending on a frequency transmitted from the reader/writer.  
   
   
       35 . The thin semiconductor device according to  claim 33 , wherein the frequency is any of a sub millimeter wave 300 GHz to 3 THz, an extremely-high-frequency wave 30 GHz to 300 GHz, a super-high-frequency wave 3 GHz to 30 GHz, an ultra-high-frequency wave 300 MHz to 3 GHz, a very-high-frequency 30 MHz to 300 MHz, a high-frequency wave 3 MHz to 30 MHz, a medium-frequency wave 300 KHz to 3 MHz, a long-frequency wave 30 KHz to 300 KHz and a very-long frequency wave 3 KHz to 30 KHz.  
   
   
       36 . The thin semiconductor device according to  claim 34 , wherein the frequency is any of a sub millimeter wave 300 GHz to 3 THz, an extremely-high-frequency wave 30 GHz to 300 GHz, a super-high-frequency wave 3 GHz to 30 GHz, an ultra-high-frequency wave 300 MHz to 3 GHz, a very-high-frequency 30 MHz to 300 MHz, a high-frequency wave 3 MHz to 30 MHz, a medium-frequency wave 300 KHz to 3 MHz, a long-frequency wave 30 KHz to 300 KHz and a very-long frequency wave 3 KHz to 30 KHz.  
   
   
       37 . The thin semiconductor device according to  claim 28 , wherein at least one thin film integrated circuit of the plurality of thin film integrated circuits receives a signal depending on a communication means transmitted from the reader/writer.  
   
   
       38 . The thin semiconductor device according to  claim 29 , wherein at least one thin film integrated circuit of the plurality of thin film integrated circuits receives a signal depending on a communication means transmitted from the reader/writer.  
   
   
       39 . The thin semiconductor device according to  claim 37 , wherein the communication means is a digital modulation system and is any one of amplitude shift keying, frequency shift keying and phase shift keying.  
   
   
       40 . The thin semiconductor device according to  claim 38 , wherein the communication means is a digital modulation system and is any one of amplitude shift keying, frequency shift keying and phase shift keying.  
   
   
       41 . The thin semiconductor device according to  claim 37 , wherein the communication means is an analog modulation system and is any of amplitude modulation, frequency modulation and phase modulating.  
   
   
       42 . The thin semiconductor device according to  claim 38 , wherein the communication means is an analog modulation system and is any of amplitude modulation, frequency modulation and phase modulating.  
   
   
       43 . The thin semiconductor device according to  claim 37 , wherein the communication means is either of one-way communication and two-way communication, and is any of a space division multiplex access method, a polarization division multiplex access method, a frequency-division multiplex access method, a time-division multiplex access method, a code division multiplex access method and an orthogonal frequency division multiplexing method.  
   
   
       44 . The thin semiconductor device according to  claim 38 , wherein the communication means is either of one-way communication and two-way communication, and is any of a space division multiplex access method, a polarization division multiplex access method, a frequency-division multiplex access method, a time-division multiplex access method, a code division multiplex access method and an orthogonal frequency division multiplexing method.  
   
   
       45 . An operation method of a thin semiconductor device having a plurality of thin film integrated circuits provided with a semiconductor film of 40 nm to 170 nm thick, comprising the steps of: 
 communicating with a reader/writer;    writing information in a memory by a signal received by at least one thin film integrated circuit of the plurality of thin film integrated circuits; and    communicating with any of the plurality of thin film integrated circuits depending on information written in the memory.    
   
   
       46 . An operation method of a thin semiconductor device having a plurality of thin film integrated circuits provided with an antenna and a semiconductor film of 40 nm to 170 nm thick, comprising the steps of: 
 communicating with a reader/writer;    writing information in a memory by a signal received by at least one thin film integrated circuit of the plurality of thin film integrated circuits; and    communicating with any of the plurality of thin film integrated circuits depending on information written in the memory.    
   
   
       47 . An operation method of a thin semiconductor device having a plurality of thin film integrated circuits provided with an antenna, a memory and a semiconductor film of 40 nm to 170 nm thick, comprising the steps of: 
 communicating with a reader/writer;    writing information in the memory by a signal received by at least one thin film integrated circuit of the plurality of thin film integrated circuits; and    communicating with any of the plurality of thin film integrated circuits depending on information written in the memory.    
   
   
       48 . The operation method of a thin semiconductor device according to  claim 45 , wherein at least one thin film integrated circuit of the plurality of thin film integrated circuits receives a signal depending on a frequency transmitted from the reader/writer.  
   
   
       49 . The operation method of a thin semiconductor device according to  claim 46 , wherein at least one thin film integrated circuit of the plurality of thin film integrated circuits receives a signal depending on a frequency transmitted from the reader/writer.  
   
   
       50 . The operation method of a thin semiconductor device according to  claim 47 , wherein at least one thin film integrated circuit of the plurality of thin film integrated circuits receives a signal depending on a frequency transmitted from the reader/writer.  
   
   
       51 . The operation method of a thin semiconductor device according to  claim 48 , wherein the frequency is any of a sub millimeter wave 300 GHz to 3 THz, an extremely-high-frequency wave 30 GHz to 300 GHz, a super-high-frequency wave 3 GHz to 30 GHz, an ultra-high-frequency wave 300 MHz to 3 GHz, a very-high-frequency 30 MHz to 300 MHz, a high-frequency wave 3 MHz to 30 MHz, a medium-frequency wave 300 KHz to 3 MHz, a long-frequency wave 30 KHz to 300 KHz and a very-long frequency wave 3 KHz to 30 KHz.  
   
   
       52 . The operation method of a thin semiconductor device according to claim  49 , wherein the frequency is any of a sub millimeter wave 300 GHz to 3 THz, an extremely-high-frequency wave 30 GHz to 300 GHz, a super-high-frequency wave 3 GHz to 30 GHz, an ultra-high-frequency wave 300 MHz to 3 GHz, a very-high-frequency 30 MHz to 300 MHz, a high-frequency wave 3 MHz to 30 MHz, a medium-frequency wave 300 KHz to 3 MHz, a long-frequency wave 30 KHz to 300 KHz and a very-long frequency wave 3 KHz to 30 KHz.  
   
   
       53 . The operation method of a thin semiconductor device according to  claim 50 , wherein the frequency is any of a sub millimeter wave 300 GHz to 3 THz, an extremely-high-frequency wave 30 GHz to 300 GHz, a super-high-frequency wave 3 GHz to 30 GHz, an ultra-high-frequency wave 300 MHz to 3 GHz, a very-high-frequency 30 MHz to 300 MHz, a high-frequency wave 3 MHz to 30 MHz, a medium-frequency wave 300 KHz to 3 MHz, a long-frequency wave 30 KHz to 300 KHz and a very-long frequency wave 3 KHz to 30 KHz.  
   
   
       54 . The operation method of a thin semiconductor device, according to  claim 45 , control is done by a communication means so that a signal is received by at least one of the plurality of thin film integrated circuits.  
   
   
       55 . The operation method of a thin semiconductor device, according to  claim 46 , control is done by a communication means so that a signal is received by at least one of the plurality of thin film integrated circuits.  
   
   
       56 . The operation method of a thin semiconductor device, according to  claim 47 , control is done by a communication means so that a signal is received by at least one of the plurality of thin film integrated circuits.  
   
   
       57 . The operation method of a thin semiconductor device according to  claim 54 , wherein the communication means is a digital modulation system and is any one of amplitude shift keying, frequency shift keying and phase shift keying.  
   
   
       58 . The operation method of a thin semiconductor device according to  claim 55 , wherein the communication means is a digital modulation system and is any one of amplitude shift keying, frequency shift keying and phase shift keying.  
   
   
       59 . The operation method of a thin semiconductor device according to  claim 56 , wherein the communication means is a digital modulation system and is any one of amplitude shift keying, frequency shift keying and phase shift keying.  
   
   
       60 . The operation method of a thin semiconductor device according to  claim 54 , wherein the communication means is an analog modulation system and is any of amplitude modulation, frequency modulation and phase modulating.  
   
   
       61 . The operation method of a thin semiconductor device according to  claim 55 , wherein the communication means is an analog modulation system and is any of amplitude modulation, frequency modulation and phase modulating.  
   
   
       62 . The operation method of a thin semiconductor device according to  claim 56 , wherein the communication means is an analog modulation system and is any of amplitude modulation, frequency modulation and phase modulating.  
   
   
       63 . The operation method of a thin semiconductor device according to  claim 54 , wherein the communication means is either of one-way communication and two-way communication, and is any of a space division multiplex access method (SDMA), a polarization division multiplex access method, a frequency-division multiplex access method, a time-division multiplex access method, a code division multiplex access method and an orthogonal frequency division multiplexing method, and wherein a signal is transmitted to at least of the plurality of thin film integrated circuits by conducting any one of the communication means.  
   
   
       64 . The operation method of a thin semiconductor device according to  claim 55 , wherein the communication means is either of one-way communication and two-way communication, and is any of a space division multiplex access method (SDMA), a polarization division multiplex access method, a frequency-division multiplex access method, a time-division multiplex access method, a code division multiplex access method and an orthogonal frequency division multiplexing method, and wherein a signal is transmitted to at least of the plurality of thin film integrated circuits by conducting any one of the communication means.  
   
   
       65 . The operation method of a thin semiconductor device according to  claim 56 , wherein the communication means is either of one-way communication and two-way communication, and is any of a space division multiplex access method (SDMA), a polarization division multiplex access method, a frequency-division multiplex access method, a time-division multiplex access method, a code division multiplex access method and an orthogonal frequency division multiplexing method, and wherein a signal is transmitted to at least of the plurality of thin film integrated circuits by conducting any one of the communication means.