US2007273004A1PendingUtilityA1

Like integrated circuit devices with different depth

Assignee: IBMPriority: Sep 22, 2005Filed: Aug 9, 2007Published: Nov 29, 2007
Est. expirySep 22, 2025(expired)· nominal 20-yr term from priority
H10P 14/6342H10P 50/693H10W 20/497H10W 20/40H10W 20/089H10P 14/683H10P 50/242H10P 50/28H10P 50/00H10D 1/20H01F 41/041
48
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Claims

Abstract

The invention forms integrated circuit devices of similar structure and dissimilar depth, such as interconnects and inductors, simultaneously. The invention deposits a conformal polymer over an area on a substrate with vias and an area without vias. Simultaneously, cavities are formed in the areas with and without vias. The depth of the cavities formed in the areas with vias will extend deeper into the substrate than the cavities formed in areas without vias. Such occurs because the polymer deposits unevenly along the surface of the substrate and more specifically, more thinly in areas with underlying depressions. Once filled with a conductive material, cavities which extend more deeply into the substrate, which were formed in areas with vias, become inductors, and the cavities which extend less deeply into the substrate, which were formed in areas without vias, become interconnects.

Claims

exact text as granted — not AI-modified
1 - 7 . (canceled)  
   
   
       8 . An integrated circuit, comprising: 
 a substrate having an area with a depression and an area absent said depression;    a planarizing polymer deposited over said area with said depression and said area absent said depression, said polymer having a depth differential between said area with said depression and said area absent said depression, said polymer thicker in said area absent said depression than said area with said depression;    at least two cavities formed through said polymer, one cavity formed in said area with said depression and another cavity formed in said area absent said depression, said cavity formed in said area with said depression extends deeper into said substrate than said cavity formed in said area absent said depression by said depth differential of said polymer.    
   
   
       9 . An integrated circuit as in  claim 8 , said depression is a via.  
   
   
       10 . An integrated circuit as in  claim 8 , said deposited polymer is 25.0-45.0% thinner over said area with said depression than said area absent said depression.  
   
   
       11 . An integrated circuit as in  claim 8 , further comprising: 
 a conductive material that fills said cavity formed in said area with said depression and said cavity formed in said area absent said depression.    
   
   
       12 . An integrated circuit as in  claim 11 , said cavity filled with conductive material in said area with said depression is an inductor.

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