Nanoscopic wire-based devices and arrays

Abstract

Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.

1 . An article comprising: 
 an electrical crossbar array comprising at least two crossed conductors, at least one of which is a nanoscopic wire constructed and arranged to be movable from a first position to a second position.    
     
     
         2 . An article as in  claim 1 , wherein the at least two conductors are in electrical contact with each other.  
     
     
         3 . An article as in  claim 1 , wherein the at least two conductors are not in contact with each other.  
     
     
         4 . An article as in  claim 1 , wherein the at least two conductors comprise a first wire disposed adjacent a second wire at a junction.  
     
     
         5 . An article as in  claim 4 , wherein a first conductor of the at least two crossed conductors is positioned on a substrate.  
     
     
         6 . An article as in  claim 5 , wherein the first conductor is positioned intermediate the substrate and a second conductor of the at least two crossed conductors.  
     
     
         7 . An article as in  claim 6 , wherein the second conductor is supported above the first conductor, relative to the substrate.  
     
     
         8 . An article as in  claim 4 , wherein the second conductor has sufficient stiffness to remain free of contact with the first conductor.  
     
     
         9 . An article as in  claim 8 , wherein the second conductor has a sufficient Young's modulus, such that the second conductor is capable of deformable van der Waals contact with the first wire at the junction, upon exposure to a stimulus.  
     
     
         10 . An article as in  claim 1 , wherein the crossbar array comprises a first set and second set of at least two parallel conductors.  
     
     
         11 . An article as in  claim 10 , wherein the first set of parallel conductors is perpendicular to the second set of parallel conductors.  
     
     
         12 . An article as in  claim 10 , wherein the second set of conductors is disposed adjacent the first set of conductors at a plurality of junctions.  
     
     
         13 . An article as in  claim 1 , further comprising a contact electrode in electrical contact with at least one of the conductors.  
     
     
         14 . An article as in  claim 13 , wherein the at least one conductor is attached to the contact electrode.  
     
     
         15 . An article as in  claim 13 , wherein the at least one conductor is covalently attached to the contact electrode.  
     
     
         16 . An article as in  claim 1 , wherein each of the at least two conductors is in electrical contact with a different contact electrode.  
     
     
         17 . An article as in  claim 1 , wherein the nanotube is single-walled.  
     
     
         18 . An article as in  claim 17 , wherein the nanotube is a single-walled carbon nanotube.  
     
     
         19 . An article as in  claim 17 , wherein the nanotube is a multiwall carbon nanotube.  
     
     
         20 . An article as in  claim 1 , wherein the nanotube is a semiconducting nanotube.  
     
     
         21 . An article as in  claim 1 , wherein the nanotube is a metallic nanotube.  
     
     
         22 . An article as in  claim 1 , wherein the nanoscopic wire comprises a nanotube rope.  
     
     
         23 . The article of  claim 1 , wherein at least one of the conductors is produced by a process comprising forming the conductor, and transporting the conductor onto a surface.  
     
     
         24 . An article comprising: 
 An electrical crossbar array comprising at least two crossed conductors defining a memory element able to be switched between at least two readable states, at least one of the conductors being constructed and arranged to be movable from a first position to a second position, the article free of means addressing the memory element to effect switching of the memory element between the at least two states, wherein at least one of the conductors is a nanoscopic conductor produced by a process comprising forming the conductor, and transporting the conductor onto a surface.    
     
     
         25 . An article comprising: 
 An electrical crossbar array comprising at least two crossed conductors defining a memory element able to be switched between at least two readable states, at least one of the conductors being constructed and arranged to be movable from a first position to a second position, the article free of auxiliary circuitry defining the memory element, wherein at least one of the conductors is a nanoscopic conductor produced by a process comprising forming the conductor, and transporting the conductor onto a surface.    
     
     
         26 . An article as in  claim 25 , wherein the memory element comprises a junction of the two crossed conductors.  
     
     
         27 . An article as in  claim 25 , wherein the auxiliary circuitry includes transistors and capacitors.  
     
     
         28 . An article comprising: 
 an electrical crossbar array comprising at least two crossed nanoscopic conductors defining a memory element capable of being switched reversibly between at least two readable states, at least one of the conductors being constructed and arranged to be movable from a first position to a second position.    
     
     
         29 . An article as in  claim 28 , wherein the step of switching comprises biasing the at least two nanoscopic conductors.  
     
     
         30 . An article as in  claim 28 , wherein information stored in the memory element is volatile.  
     
     
         31 . An article as in  claim 28 , wherein information stored in the memory element is non-volatile.  
     
     
         32 . An article as in  claim 28 , wherein one readable state comprises the two conductors in van der Waals contact.  
     
     
         33 . An article as in  claim 28 , wherein the two conductors have sufficient van der Waals adhesion to maintain contact.  
     
     
         34 . The article of  claim 28 , wherein at least one of the conductors is produced by a process comprising forming the conductor, and transporting the conductor onto a surface.  
     
     
         35 . An article comprising: 
 an electrical crossbar array comprising at least two crossed nanoscopic conductors defining a memory element capable of being switched irreversibly between at least two readable states, at least one of the conductors being constructed and arranged to be movable from a first position to a second position.    
     
     
         36 . An article as in  claim 35 , wherein the step of switching comprises biasing the at least two nanoscopic conductors.  
     
     
         37 . The article of  claim 35 , wherein at least one of the conductors is produced by a process comprising forming the conductor, and transporting the conductor onto a surface.  
     
     
         38 . An article comprising: 
 an electrical crossbar array comprising at least two crossed conductors defining a memory element diode, at least one of the conductors being constructed and arranged to be movable from a first position to a second position, the article being free of auxiliary circuitry defining the memory element diode.    
     
     
         39 . An article as in  claim 38 , wherein the two crossed conductors comprise a nanotube disposed adjacent a second wire at a junction.  
     
     
         40 . An article as in  claim 39 , wherein the nanotube is a semiconductor.  
     
     
         41 . An article as in  claim 40 , wherein the second wire is a metallic conductor.  
     
     
         42 . An article as in  claim 40 , wherein the second wire is a semiconductor.  
     
     
         43 . An article as in  claim 40 , wherein the second wire is a semiconducting nanotube.  
     
     
         44 . An article as in  claim 43 , wherein the second wire is a metallic nanotube.  
     
     
         45 . The article of  claim 38 , wherein at least one of the conductors is produced by a process comprising forming the conductor, and transporting the conductor onto a surface.