Chemical mechanical polishing slurry, cmp process and electronic device process

Abstract

To provide a slurry for Chemical Mechanical Polishing, a Chemical Mechanical Polishing method using said slurry, and a method of producing electronic devices using said method that makes it possible to achieve a low scratch process capability in processing surfaces such as SiO 2 film surfaces and the like and also to enable speed polishing to attain a high processing efficiency. Slurry for Chemical Mechanical Polishing characterized in comprising abrasive grains and water, wherein said abrasive grains are composite particles coated with ceria particles consisting of organic host particles and ceria particles, zeta potential of said composite particles being a negative potential, the organic host particles constituting the composite particles coated with ceria particles are organic host particles to which carboxyl groups and sulfonyl groups are introduced; the slurry is added with panarization additive; and the planarization additive is poly(methyl)acrylic acid ammonium salt.

1 . Slurry for Chemical Mechanical Polishing characterized in comprising abrasive grains (A) and water (B), wherein said abrasive grains (A) are composite particles coated with ceria particles consisting of organic host particles and ceria particles, zeta potential of said composite particles being a negative potential. 
   
   
       2 . Slurry for Chemical Mechanical Polishing as recited in  claim 1  characterized in said organic host particles constituting said composite particles coated with ceria particles are organic host particles to which carboxyl groups and sulfonyl groups are introduced. 
   
   
       3 . Slurry for Chemical Mechanical Polishing characterized in comprising abrasive grains (A) and water (B), wherein said abrasive grains (A) are composite particles coated with ceria particles consisting of ceria particles and poly(methylmethacrylate) particles to which carboxyl groups are introduced. 
   
   
       4 . Slurry for Chemical Mechanical Polishing as recited in  claim 3  characterized in said abrasive particles (A) being composite particles coated with ceria particles having a surface layer produced by fusion locally and intermittently applying pressure and shear force to mixed fine particles consisting of ceria particles and poly(methylmethacrylate) particles to which carboxyl groups are introduced. 
   
   
       5 . Slurry for Chemical Mechanical Polishing as recited in  claim 3  characterized in the concentration of said abrasive particles (A) relative to said water (B) being in ratios of 0.2 to 10 weight percentage. 
   
   
       6 . Slurry for Chemical Mechanical Polishing as recited in  claim 3  characterized in said abrasive particles (A) being composite particles having average particles diameters of 0.3 to 10 μm. 
   
   
       7 . Slurry for Chemical Mechanical Polishing comprising abrasive grains (A), water (B) and a planarization additive (C) characterized in said abrasive grains (A) being composite particles coated with ceria particles consisting of organic host particles and ceria particles, while zeta potential of said composite particles being a negative potential. 
   
   
       8 . Slurry for Chemical Mechanical Polishing as recited in  claim 7  characterized in said organic host particles constituting said composite particles coated with ceria particles being organic host particles to which carboxyl groups and sulfonyl groups are introduced. 
   
   
       9 . Slurry for Chemical Mechanical Polishing comprising abrasive grains (A), water (B) and a planarization additive (C) characterized in said abrasive grains (A) being composite particles coated with ceria particles consisting of ceria particles and poly(methylmethacrylate) particles to which carboxyl groups are introduced. 
   
   
       10 . Slurry for Chemical Mechanical Polishing as recited in  claim 9  characterized in said composite particles coated with ceria particles being composite particles coated with ceria particles having a surface layer produced by fusion locally and intermittently applying pressure and shear force to mixed fine particles consisting of ceria particles and poly(methylmethacrylate) particles to which carboxyl groups are introduced. 
   
   
       11 . Slurry for Chemical Mechanical Polishing as recited in  claim 9  characterized in the concentration of said abrasive particles (A) relative to said water (B) being in ratios of 0.2 to 10 weight percentage. 
   
   
       12 . Slurry for Chemical Mechanical Polishing as recited in  claim 9  characterized in said abrasive particles (A) being composite particles having average particles diameters of 0.3 to 10 μm. 
   
   
       13 . Slurry for Chemical Mechanical Polishing as recited in  claim 9  characterized in the concentration of said planarization additive (C) relative to said water (B) being in ratios of 0.05 to 5 weight percentage. 
   
   
       14 . Slurry for Chemical Mechanical Polishing as recited in  claim 9  characterized in said planarization additive (C) being poly(methyl)acrylic acid ammonium salt. 
   
   
       15 . A Chemical Mechanical Polishing method using slurry for Chemical Mechanical Polishing comprising abrasive grains (A) and water (B) characterized in said abrasive grains (A) being composite particles coated with ceria particles consisting of organic host particles and ceria particles, and causing a workpiece to be polished by being in contact with the slurry for Chemical Mechanical Polishing comprising composite particles, wherein zeta potential of said composite particles being a negative potential. 
   
   
       16 . A Chemical Mechanical Polishing method as recited in  claim 15  characterized in causing a workpiece to be polished by being in contact with the slurry for Chemical Mechanical Polishing, wherein said organic host particles constituting said composite particles coated with ceria particles being organic host composite particles to which carboxyl groups and sulfonyl groups are introduced. 
   
   
       17 . A Chemical Mechanical Polishing method characterized in causing a workpiece to be in contact with and polished by slurry for Chemical Mechanical Polishing, said slurry for Chemical Mechanical Polishing comprising abrasive grains (A) and water (B), wherein said abrasive grains (A) being composite particles coated with ceria particles consisting of ceria particles and poly(methylmethacrylate) particles to which carboxyl groups are introduced. 
   
   
       18 . A Chemical Mechanical Polishing method using slurry for Chemical Mechanical Polishing comprising abrasive grains (A), water (B) and planarization additives (C) characterized in said abrasive grains (A) being composite particles coated with ceria particles consisting of organic host particles and ceria particles, wherein zeta potential of said composite particles being a negative potential. 
   
   
       19 . A Chemical Mechanical Polishing method as recited in  claim 18  characterized in causing a workpiece to be polished by being in contact with the slurry for Chemical Mechanical Polishing, wherein said organic host particles constituting said composite particles coated with ceria particles being organic host composite particles to which carboxyl groups and sulfonyl groups are introduced. 
   
   
       20 . A Chemical Mechanical Polishing method characterized in causing a workpiece to be polished by being in contact with slurry for Chemical Mechanical Polishing comprising abrasive grains (A), water (B) and planarization additives (C), wherein said abrasive grains (A) are composite particles coated with ceria particles consisting of ceria particles and poly(methylmethacrylate) particles to which carboxyl groups are introduced. 
   
   
       21 . A method of producing an electronic device characterized in including a process of causing a workpiece to be polished by being in contact with slurry for Chemical Mechanical Polishing comprising abrasive grains (A) and water (B), wherein said abrasive grains (A) being composite particles coated with ceria particles consisting of organic host particles and ceria particles, and zeta potential of said composite particles being a negative potential. 
   
   
       22 . A method of producing an electronic device as recited in  claim 21  characterized in including a process of causing a workpiece to be polished by being in contact with slurry for Chemical Mechanical Polishing, wherein said organic host particles constituting said composite particles coated with ceria particles being organic host composite particles to which carboxyl groups and sulfonyl groups are introduced. 
   
   
       23 . A method of producing an electronic device characterized in including a process of causing a workpiece to be polished by being in contact with slurry for Chemical Mechanical Polishing comprising abrasive grains (A) and water (B), wherein said abrasive grains (A) are composite particles coated with ceria particles consisting of ceria particles and poly(methylmethacrylate) particles to which carboxyl groups are introduced. 
   
   
       24 . A method of producing an electronic device characterized in including a process of causing a workpiece to be polished by being in contact with slurry for Chemical Mechanical Polishing abrasive grains (A), water (B) and planarization additives (C) characterized in said abrasive grains (A) being composite particles coated with ceria particles consisting of organic host particles and ceria particles, while zeta potential of said composite particles being a negative potential. 
   
   
       25 . A method of producing an electronic device as recited in  claim 24  characterized in including a process of causing a workpiece to be polished by being in contact with slurry for Chemical Mechanical Polishing, wherein said organic host particles constituting said composite particles coated with ceria particles being organic host composite particles to which carboxyl groups and sulfonyl groups are introduced. 
   
   
       26 . A method of producing an electronic device characterized in causing a workpiece to be polished by being in contact with slurry for Chemical Mechanical Polishing comprising abrasive grains (A), water (B) and planarization additives (C), wherein said abrasive grains (A) are composite particles coated with ceria particles consisting of ceria particles and poly(methylmethacrylate) particles to which carboxyl groups are introduced.