Photomask correction method using composite charged particle beam, and device used in the correction method

Abstract

The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method. The device of the present invention has an electron beam lens barrel that can carry out processing, as well as an FIB lens barrel, provided inside the same sample chamber, which means that a mask repair method of the present invention, in correction processing to remove redundant sections such as a mask opaque defect, phase shift film bump defect or a glass substrate cut remnant defect, comprises a step of coarse correction by etching using a focused ion beam and a step of finishing processing using an electron beam, to remove surface damage due to gallium irradiation, and residual gallium.

1 - 6 . (canceled)  
   
   
       7 . A composite charged particle beam device for mask correction, comprising: 
 a focused ion beam lens barrel fitted inside a sample chamber and an electron beam lens barrel capable of irradiating a powerful beam for processing; and    a gas introduction unit for spraying CVD source material gas or etching assist gas to beam irradiation positions from each of the lens barrels.    
   
   
       8 . The composite charged particle beam device for mask correction of  claim 7 , further comprising a secondary electron detector capable of discriminately detecting secondary electrons and secondary ions, for monitoring processing state.  
   
   
       9 . The composite charged particle beam device for mask correction of  claim 7 , wherein the electron beam lens barrel obtains a beam current value of from a few pA to a number of tens of pA, and obtains a current value of a number of nA.