Aligned polymers for an organic tft

Abstract

A method for forming an electronic device having a semiconducting active layer comprising a polymer, the method comprising aligning the chains of the polymer parallel to each other by bringing the polymer into a liquid-crystalline phase.

1 . A method for forming a transistor comprising the step of forming an active interface of the transistor between a semiconductive layer and a gate insulator layer by solution deposition of a second polymer layer on top of a solution-processed polymer layer that has not been converted into an insoluble form prior to the deposition of the second polymer layer.  
     
     
         2 . A method as claimed in  claim 1  wherein the second layer forms the gate insulator of the transistor.  
     
     
         3 . A method as claimed in  claim 1 , wherein the second layer comprises PVP.  
     
     
         4 . A method as claimed in  claim 1 , wherein the said semiconductive layer is the said solution-processed polymer layer.  
     
     
         5 . A method as claimed in  claim 1 , wherein the said solution-processed polymer layer is soluble in a non-polar organic solvent, but is insoluble in a polar solvent.  
     
     
         6 . A method as claimed in claim  57  wherein the second polymer layer is deposited from a polar organic solvent, in which the said solution-processed polymer layer is not soluble.  
     
     
         7 . A method as claimed in  claim 1 , wherein the second polymer layer is deposited from an alcohol, a protic polar solvent such as water or an aprotic polar solvent such as DMF.  
     
     
         8 . A method as claimed in  claim 1 , wherein a source-drain and/or gate electrode of the transistor is also formed from solution.  
     
     
         9 . A method according to  claim 1 , wherein the second layer is the gate insulator layer, and the solution-processed polymer layer is a uniaxially aligned liquid crystal polymer film.