Defect inspection device

Abstract

An inspecting method comprises the following steps. A plurality of defect inspection devices is formed on a wafer. Each defect inspection device comprises an insulating layer and a conductive layer stacked over the insulating layer. A defect inspection parameter is set and the wafer is scanned with an electron beam to obtain a plurality of defect signals. The number of defect signals is checked to determine if it is equal to the number of defect inspection devices. If the number of defect signals is smaller than the number of defect inspection devices, the defect inspection parameter is readjusted and the aforementioned step of performing an electron beam scanning and checking for equality between the number of defect signals and the number of defect inspection devices are repeated. The process is complete when the number of defect signals is at least equal to the number of defect inspection devices.

1 . A defect inspection device structure comprising: 
 a substrate having a plurality of conductive structures thereon;    a defect contact disposed between a pair of neighboring conductive structures;    a spacer disposed between the defect contacts and various conductive structures; and    an insulating layer disposed between the defect contacts and the substrate.    
   
   
       2 . The structure of  claim 1 , wherein the material constituting the defect contact comprises a conductive material.  
   
   
       3 . The structure of  claim 1 , wherein the spacer and the insulating layer are fabricated from an identical material.  
   
   
       4 . A defect inspection structure positioned on a scribe line of a wafer, the defect inspection device structure comprising: 
 a first insulating layer disposed on the scribe line of the wafer;    a conductive layer disposed on the first insulating layer;    a second insulating layer disposed over the conductive layer and the substrate; and    a defect contact disposed within the second insulating layer above the conductive layer.    
   
   
       5 . The defect inspection device structure of  claim 4 , wherein the material constituting the defect contact comprises a conductive material.