Semiconductor device

Abstract

A terminating resistance element of an LSI chip has an N − type impurity diffusion region formed at the surface of a P type well at the surface of a semiconductor substrate, an N + type impurity diffusion layer formed at the surface of the N − type impurity diffusion region, and a pair of electrodes formed at respective ends at the surface of the N + type impurity diffusion layer. The N − type impurity diffusion region has an impurity concentration lower than the impurity concentration of the N + type impurity diffusion layer. Therefore, the capacitance of the PN junction becomes smaller as compared to the conventional case where the N type impurity diffusion layer is provided directly at the surface of a P type semiconductor substrate. Therefore, reflection and attenuation of an input signal are suppressed.

1 . A semiconductor device comprising: 
 an input terminal receiving an input signal, and    a terminating resistance element preventing said input signal from being reflected,    wherein said terminating resistance element comprises    a semiconductor substrate of a first conductivity type,    a first impurity diffusion region of a second conductivity type, formed at a surface of said semiconductor substrate, said second conductivity type differing from said first conductivity type,    an impurity diffusion layer of the second conductivity type formed at the surface of said first impurity diffusion region, and having an impurity concentration higher than the impurity concentration of said first impurity diffusion region, and    a pair of electrodes provided apart from each other at a surface of said impurity diffusion layer, one of said electrodes being connected to said input terminal, and the other of said electrodes connected to a line of a first power supply potential.    
   
   
       2 - 6 . (canceled)