Semiconductor device using metal nitride as insulating film

Abstract

A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.

1 . A semiconductor device comprising: 
 a first insulating film formed on a semiconductor substrate;    a second insulating film consisting of zirconium nitride and formed on said first insulating film;    a recess formed through said second insulating film and reaching a position deeper than an upper surface of said first insulating film; and    a conductive member filling said recess.    
   
   
       2 . A semiconductor device according to  claim 1 , wherein said conductive member is copper or alloy containing copper as a main composition.  
   
   
       3 . A semiconductor device comprising: 
 a lower wiring layer containing a plurality of wiring lines and formed on a semiconductor substrate;    an upper wiring layer containing a plurality of wiring lines and formed on said lower wiring layer; and    an interlayer insulating film disposed between said lower and upper wiring layers and consisting of zirconium nitride,    wherein in a crossed area between wiring lines of said upper and lower wiring layers, said interlayer insulating film occupies a half or more than half of a distance between the crossed wiring lines.