Semiconductor device and method for producing the same

Abstract

A method for producing a semiconductor device of the present invention includes forming a surface electrode on a semiconductor element, forming a solder layer by plating on one principal surface of the surface electrode, mounting the semiconductor element on the sub-mount so that the solder layer contacts a principal surface of the sub-mount, and bonding the sub-mount and the semiconductor element to each other via the solder layer.

1 - 24 . (canceled)  
     
     
         25 . A semiconductor device having a sub-mount and a semiconductor element bonded to each other via a solder layer, comprising: 
 a surface electrode formed on a principal surface of the semiconductor element on the sub-mount side;    the solder layer partially formed on the surface electrode; and    a covering layer formed over an entire surface of the solder layer,    wherein a part of the surface electrode is exposed, and    wherein the covering layer is made of an Au-rich layer.    
     
     
         26 . The semiconductor device according to  claim 25 , wherein the Au-rich layer contains Au in an amount of 90 wt % or more.  
     
     
         27 - 31 . (canceled)