Cleaning solution and method for selectively removing layer in a silicidation process

Abstract

A cleaning solution selectively removes a titanium nitride layer and a non-reacting metal layer. The cleaning solution includes an acid solution and an oxidation agent with iodine. The cleaning solution also effectively removes a photoresist layer and organic materials. Moreover, the cleaning solution can be employed in tungsten gate electrode technologies that have been spotlighted because of the capability to improve device operation characteristics.

1 . A method of selectively removing a photoresist layer and organic materials in a fabricating process of semiconductor devices, comprising: 
 selectively removing the photoresist layer and organic materials using a cleaning solution, the cleaning solution including an acid solution and an oxidation agent containing iodine.    
   
   
       2 . The method of  claim 1 , wherein the cleaning solution further comprises water.  
   
   
       3 . The method of  claim 1 , wherein the acid solution includes at least one of sulfuric acid and phosphoric acid, and the oxidation agent containing iodine includes at least one selected from the group consisting of KIO 3 , NH 4 IO 3 , LiIO 3 , CaIO 3 , BaIO 3 , KI, and NH 4 I.  
   
   
       4 . The method of  claim 2 , wherein the cleaning solution includes water in an amount of about 30 wt % and less, and the oxidation agent containing iodine in an amount of about 0.003 to 10 wt %.  
   
   
       5 . A cleaning solution that selectively removes a titanium nitride layer and a non-reacting metal layer in a silicidation process, 
 wherein the cleaning solution includes an acid solution, an oxidation agent containing iodine, and water.    
   
   
       6 . The method of  claim 5 , wherein the acid solution includes at least one of sulfuric acid and phosphoric acid, and the oxidation agent containing iodine includes at least one selected from the group consisting of KIO 3 , NH 4 IO 3 , LiIO 3 , CaIO 3 , BaIO 3 , KI, and NH 4 I.  
   
   
       7 . The method of  claim 5 , wherein the cleaning solution includes water in an amount of about 30 wt % and less and an oxidation agent containing iodine in an amount of about 0.003-about 10 wt %.  
   
   
       8 . The method of  claim 5 , wherein the non-reacting metal layer includes at least one of cobalt, titanium, and nickel.