Electronic device with lead-free metal thin film formed on the surface thereof

Abstract

A resin sealed IC has a plurality of external terminals. A metal thin film made of a Sn—Bi alloy is formed in direct contact with the surface of a base member of each external terminal. A Bi content in the Sn—Bi alloy layer is within a range of 0.5 to 6.0 wt %. Further, the Sn—Bi alloy layer has a single-layer plating structure, and the film thickness is within a range of 10 to 25 MIC.

1 . An electronic device comprising: 
 a plurality of external terminals each having a base member and a metal thin film formed in direct contact with a surface of the base member,    the metal thin film being made of an alloy of tin and silver and the silver being contained in the alloy so as to satisfy the following conditional expression      15≦Xm≦25 and 2.0≦Cam≦4.0,    wherein Xm indicating the thickness (MIC) of the metal thin film and Cam indicating wt % of the silver in the metal thin film.    
   
   
       2 . The electronic device as claimed in  claim 1 , wherein the metal thin film is formed by plating.  
   
   
       3 . The electronic device as claimed in  claim 1 , wherein the base member is composed of a conductive material.  
   
   
       4 . The electronic device as claimed in  claim 3 , wherein the conductive material comprises a metal selected among the group including an iron-nickel alloy, an iron-nickel-based alloy, copper, a copper-based alloy and iron.  
   
   
       5 . An electronic device comprising: 
 a plurality of external terminals each having a base member and a metal thin film formed in direct contact with a surface of the base member,    the metal thin film being made of an alloy of tin and zinc and the zinc being contained in the alloy so as to satisfy the following conditional expression      15≦Xm≦30 and 4.0≦Cam≦9.0,    wherein Xm indicating the thickness (MIC) of the metal thin film and Cam indicating wt % of the silver in the metal thin film.    
   
   
       6 . The electronic device as claimed in  claim 5 , wherein the metal thin film is formed by plating.  
   
   
       7 . The electronic device as claimed in  claim 5 , wherein the base member is composed of a conductive material.  
   
   
       8 . The electronic device as claimed in  claim 7 , wherein the conductive material comprises a metal selected among the group including an iron-nickel alloy, an iron-nickel-based alloy, copper, a copper-based alloy and iron.