Semiconductor constructions

Abstract

In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

1 - 21 . (canceled)  
   
   
       22 . A semiconductor construction comprising a substrate having hydrogenated material thereover, the hydrogenated material comprising silicon, wherein a refractive index coefficient of at least a portion of the material when exposed to 248 nm wavelength light is less than or equal to 1.89.  
   
   
       23 . The construction of  claim 22  wherein the material comprises an inorganic material.  
   
   
       24 . The construction of  claim 22  wherein the material is configured to attenuate radiation.  
   
   
       25 . The construction of  claim 22  wherein an extinction coefficient of at least a portion of the material when exposed to 248 nm wavelength light is less than or equal to 1.41.  
   
   
       26 . The construction of  claim 22  further comprising a layer of photoresist over the material.  
   
   
       27 . The construction of  claim 26  wherein the layer of photoresist comprises positive resist.  
   
   
       28 . The construction of  claim 26  wherein the photoresist physically contacts the material.  
   
   
       29 - 30 . (canceled)  
   
   
       31 . The construction of  claim 22  wherein the material comprises silicon dioxide.  
   
   
       32 . The construction of  claim 22  wherein the material consists of one substantially homogenous layer.  
   
   
       33 - 41 . (canceled)