Solid-state image pickup device, a camera module and a method for manufacturing thereof

Abstract

A solid-state image pickup device includes a solid-state image sensor chip having a solid-state image sensor having a photosensitive element formed on a main surface of a semiconductor substrate and chip electrodes led to the back surface of the semiconductor substrate, a passive chip bonded on the back surface of the solid-state image sensor chips having passive parts mounted in its thickness and electrically connected to the chip electrodes of the solid-state image sensors. The device further includes a lens holder fixed to enclose the photosensitive element of the solid-state image pickup sensor chip and a lens barrel to fit into the lens holders, wherein the passive chip is formed having a size equal to or smaller than a size of the solid-state image sensors.

1 . A solid-state image pickup device comprising:
 a solid-state image sensor chip having a solid-state image sensor including a photosensitive element formed on a main surface of a semiconductor substrate and chip electrodes led to the back surface of the semiconductor substrate; and   a passive chip bonded on the back surface of the solid-state image sensor chips having passive parts mounted in its thickness and electrically connected to the chip electrodes of the solid-state image sensors;   wherein the passive chip is formed having a size equal to or smaller than a size of the solid-state image sensors.   
   
   
       2 . A solid-state image pickup device according to  claim 1 , wherein the passive chip further comprises:
 a printed circuit board;   a passive component buried in the printed circuit board;   a wiring circuit printed on the surface of the printed circuit board for electrically connecting the chip electrode of the solid-state image sensor chip to the passive component of the passive chip and to mutually connect the passive components; and   a lead-through electrode for connecting the chip electrode of the solid-state image sensing chip connected to the wiring element to an outer connecting terminal on the back surface of the passing chip.   
   
   
       3 . A solid-state image pickup device according to  claim 1 , wherein the passive chip further comprises;
 a semiconductor substrate;   a passive component formed on the main surface of the semiconductor substrate;   a wiring circuit formed on the main surface of the semiconductor substrate for electrically connecting chip electrode of the solid-state image sensor chip to the passive component of the passive chip; and   a lead-through electrode for connecting the chip electrode of the solid-state image sensor chip to the external connecting terminal on the back surface of the passive chip.   
   
   
       4 . A solid-state image pickup device according to  claim 3 , wherein the passive component is a capacitor comprising an oxidized membrane formed on the surface of the semiconductor substrate and an electrode formed thereon. 
   
   
       5 . A solid-state image pickup device according to  claim 3 , wherein the passive component is a capacitor comprising:
 a trench groove formed on the surface of the semiconductor substrate;   an oxidized membrane formed on the surface of the semiconductor substrate including the trench groove and an electrode formed thereon.   
   
   
       6 . A camera module comprising:
 a solid-state image sensor chip having a solid-state image sensor including a photosensitive element formed on a main surface of a semiconductor substrate and chip electrodes led to the back surface of the semiconductor substrate;   a passive chip bonded on the back surface of the solid-state image sensor chips having passive parts mounted in its thickness and electrically connected to the chip electrodes of the solid-state image sensors;   a lens holder fixed to enclose the photosensitive element of the solid-state image pickup sensor chip; and a lens barrel to fit into the lens holders;   wherein the passive chip is formed having a size equal to or smaller than a size of the solid-state image sensors.   
   
   
       7 . A solid-state image pickup device according to  claim 6 , wherein the passive chip further comprises:
 a printed circuit board;   a passive component buried in the printed circuit board;   a wiring circuit printed on the surface of the printed circuit board for electrically connecting the chip electrode of the solid-state image sensor chip to the passive component of the passive chip and to mutually connect the passive components; and   a lead-through electrode for connecting the chip electrode of the solid-state image sensing chip connected to the wiring element to an outer connecting terminal on the back surface of the passing chip.   
   
   
       8 . A camera module according to  claim 6 , wherein the passive chip further comprises;
 a semiconductor substrate;   a passive component formed on the main surface of the semiconductor substrate;   a wiring circuit formed on the main surface of the semiconductor substrate for electrically connecting chip electrode of the solid-state image sensor chip to the passive component of the passive chip; and   a lead-through electrode for connecting the chip electrode of the solid-state image sensor chip to the external connecting terminal on the back surface of the passive chip.   
   
   
       9 . A camera module according to  claim 8 , wherein the passive component is a capacitor comprising an oxidized membrane formed on the surface of the semiconductor substrate and an electrode formed thereon. 
   
   
       10 . A camera module according to  claim 8 , wherein the passive component is a capacitor comprising:
 a trench groove formed on the surface of the semiconductor substrate;   an oxidized membrane formed on the surface of the semiconductor substrate including the trench groove and an electrode formed thereon.   
   
   
       11 . A camera module according to  claim 10 , wherein the solid-sate image sensor chip further comprises:
 a dam-shape spacer formed on a portion other than the photosensitive area on the main surface of the semiconductor substrate; and   an optical filter fixed on the dam-shape spacer;   
     and wherein the lens holder is fixed on the optical filer. 
   
   
       12 . A camera module according to  claim 11 , wherein the outer surfaced of the lens holder, the solid-state image sensor chips and the passive chips mutually laminated by bonding, and the lens holder fixed on the solid-state image sensor chip surface are provided with a light shielding cover or are coated with the light shielding paint. 
   
   
       13 . A method for manufacturing a camera module comprising steps of:
 forming passive components and a wiring section for connecting the passive components with each other in a plurality of chip areas on the main surface of the first semiconductor wafer respectively;   forming a first lead-through electrode at a peripheral part of each of the chip areas, to which the wiring section in each chip area is connected;   forming a solid-state image sensor in the plural number of chip areas on the main surface of the second semiconductor wafer respectively and pads connected to the solid-state mage sensors at a peripheral part of each of the chip areas;   forming a second lead-through electrode that is connected to the pads at the peripheral parts of each of the chip areas;   bonding the second semiconductor wafer on the main surface of the first semiconductor wafer by aligning the first and the second lead-through electrodes formed in each of the chip areas so as to contact with each other;   forming a dam-shaped spacer at the peripheral part of each of the chip areas of the second semiconductor wafer;   fixing an optical filter on the dam-shaped spacer formed at the peripheral part of each of the chip areas;   fixing a lens holder on the optical filter in each of the chip areas; and   cutting and separating the first and the second semiconductor wafers laminated and fixed to each other for every chip area.   
   
   
       14 . A method for manufacturing a camera module according to  claim 13 , wherein the passive component is a capacitor comprising an oxidized membrane formed on the surface of the first semiconductor wafer and an electrode formed thereon. 
   
   
       15 . A method for manufacturing a camera module according to  claim 14 , wherein the passive component is a capacitor comprising a trench groove formed on the surface of the semiconductor substrate, an oxidized membrane formed on the surface of the semiconductor substrate including the trench groove and an electrode formed thereon. 
   
   
       16 . A method for manufacturing a camera module according to  claim 15 , wherein the first semiconductor wafer and the second semiconductor wafer are bonded to each other by anisotropic conductive paste. 
   
   
       17 . A method for manufacturing camera module according to  claim 16 , wherein the first semiconductor wafer is an N type Si circuit board. 
   
   
       18 . A method for manufacturing a camera module comprising steps of:
 forming passive components and a wiring section for connecting the passive components with each other in a plurality of chip areas on the main surface of the first semiconductor wafer respectively;   forming a first lead-through electrode at a peripheral part of each of the chip areas, to which the wiring section in each chip area is connected;   forming a solid-state image sensor in the plural number of chip areas on the main surface of the second semiconductor wafer respectively and pads connected to the solid-state image sensors at a peripheral part of each of the chip areas;   forming a second lead-through electrode that is connected to the pads at the peripheral parts of each of the chip areas;   bonding the second semiconductor wafer on the main surface of the first semiconductor wafer by aligning the first and the second lead-through electrodes formed in each of the chip areas so as to contact with each other;   forming a dam-shaped spacer at a portion other than the portion where the pad is formed in the peripheral part of each of the chip areas of the second semiconductor wafer;   fixing an optical filter on the dam-shaped spacer formed at the peripheral part of each of the chip areas;   fixing a lens holder on the optical filter in each of the chip areas;   
     removing a potion of the optical filter between the adjacent chip areas; and
 cutting and separating the first and the second semiconductor wafers laminated and fixed to each other for every chip area. 
 
   
   
       19 . A method for manufacturing a solid-state image pickup device according to  claim 18 , wherein the passive component is a capacitor comprising an oxidized membrane formed on the surface of the first semiconductor wafer and an electrode formed thereon.