Vertical plasma processing apparatus and method for semiconductor process

Abstract

A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.

1 . A vertical plasma processing apparatus for a semiconductor process, the apparatus comprising: 
 a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field;    a support member configured to support the target substrates inside the process field;    an exciting mechanism including a plasma generation area disposed in a space communicating with the process field, the plasma generation area extending over a length corresponding to the process field in a vertical direction;    a process gas supply circuit configured to supply a process gas to the process field, such that the process gas is exited while passing through the plasma generation area, and the process gas is supplied to the process field to form essentially horizontal gas flows;    an exhaust system configured to exhaust gas from the process field, and including an exhaust port facing the plasma generation area with the process field interposed therebetween;    a blocking gas supply circuit configured to supply a blocking gas to the marginal space, such that the blocking gas is not supplied directly to the process field but is supplied directly to the marginal space; and    a control section configured to control an operation of the apparatus, wherein, in processing the target substrates, the control section simultaneously performs supply of the process gas to the process field from the process gas supply circuit and supply of the blocking gas to the marginal space from the blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.    
   
   
       2 . The apparatus according to  claim 1 , wherein the marginal space comprises one of a lower space and an upper space respectively present below and above the process field, and the blocking gas supply circuit has a supply port opened to the marginal space.  
   
   
       3 . The apparatus according to  claim 1 , wherein the marginal space comprises a lower space and an upper space respectively present below and above the process field, and the blocking gas supply circuit has a lower supply port and an upper supply port respectively opened to the lower space and the upper space.  
   
   
       4 . The apparatus according to  claim 3 , wherein the support member is configured to support the target substrate between a bottom plate and a top plate, the lower supply port is opened below the bottom plate, and the upper supply port is opened above the top plate.  
   
   
       5 . The apparatus according to  claim 1 , wherein the exhaust port extends over a length corresponding to the process field in a vertical direction.  
   
   
       6 . The apparatus according to  claim 5 , wherein, in processing the target substrates, the control section simultaneously performs supply of the process gas to the process field from the process gas supply circuit, supply of the blocking gas to the marginal space from the blocking gas supply circuit, and exhaust of gas from the process container through the exhaust port.  
   
   
       7 . The apparatus according to  claim 3 , wherein the lower supply port and the upper supply port is formed in a common nozzle extending in a vertical direction within the process container, and the nozzle includes no opening at a position corresponding to the process field.  
   
   
       8 . The apparatus according to  claim 1 , further comprising a partition plate located between the process field and the plasma generation area and having an insulative surface, the partition plate including a gas passage disposed over a length corresponding to the process field in a vertical direction.  
   
   
       9 . The apparatus according to  claim 8 , wherein the gas passage comprises a plurality of gas diffusion holes arrayed at intervals in a vertical direction over the process field to form gas flows parallel with the plurality of target substrates.  
   
   
       10 . A processing method in a vertical plasma processing apparatus for a semiconductor process, 
 the apparatus including    a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field,    a support member configured to support the target substrates inside the process field,    an exciting mechanism including a plasma generation area disposed in a space communicating with the process field, the plasma generation area extending over a length corresponding to the process field in a vertical direction,    a process gas supply circuit configured to supply a process gas to the process field, such that the process gas is exited while passing through the plasma generation area, and the process gas is supplied to the process field to form essentially horizontal gas flows,    an exhaust system configured to exhaust gas from the process field, and including an exhaust port facing the plasma generation area with the process field interposed therebetween, and    a blocking gas supply circuit configured to supply a blocking gas to the marginal space, such that the blocking gas is not supplied directly to the process field but is supplied directly to the marginal space,    the method comprising: processing the target substrates while simultaneously performing supply of the process gas to the process field from the process gas supply circuit and supply of the blocking gas to the marginal space from the blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.    
   
   
       11 . A vertical plasma processing apparatus for a semiconductor process, the apparatus comprising: 
 a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field;    a support member configured to support the target substrates inside the process field;    a heater configured to heat the target substrates inside the process field;    an exciting mechanism including a plasma generation area disposed in a space communicating with the process field, the plasma generation area extending over a length corresponding to the process field in a vertical direction;    a process gas supply system configured to selectively supply into the process field a first process gas that provides a main material of a thin film and a second process gas that reacts with the first process gas, so as to deposit the thin film on the target substrates, such that at least one of the first and second process gases is exited while passing through the plasma generation area, and the first and second process gases are supplied to the process field to form essentially horizontal gas flows;    an exhaust system configured to exhaust gas from the process field, and including an exhaust port facing the plasma generation area with the process field interposed therebetween;    a blocking gas supply circuit configured to supply a blocking gas to the marginal space, such that the blocking gas is not supplied directly to the process field but is supplied directly to the marginal space; and    a control section configured to control an operation of the apparatus, wherein, in order to deposit the thin film on the target substrates, the control section executes supply of the first process gas to the process field and supply of the second process gas to the process field, repeatedly a plurality of times, while simultaneously performing supply of each of the first and second process gases to the process field from the process gas supply system and supply of the blocking gas to the marginal space from the blocking gas supply circuit to inhibit the first and second process gases from flowing into the marginal space.    
   
   
       12 . The apparatus according to  claim 11 , wherein the marginal space comprises one of a lower space and an upper space respectively present below and above the process field, and the blocking gas supply circuit has a supply port opened to the marginal space.  
   
   
       13 . The apparatus according to  claim 11 , wherein the marginal space comprises a lower space and an upper space respectively present below and above the process field, and the blocking gas supply circuit has a lower supply port and an upper supply port respectively opened to the lower space and the upper space.  
   
   
       14 . The apparatus according to  claim 13 , wherein the support member is configured to support the target substrate between a bottom plate and a top plate, the lower supply port is opened below the bottom plate, and the upper supply port is opened above the top plate.  
   
   
       15 . The apparatus according to  claim 11 , further comprising a partition plate located between the process field and the plasma generation area and having an insulative surface, the partition plate including a gas passage disposed over a length corresponding to the process field in a vertical direction.  
   
   
       16 . The apparatus according to  claim 11 , wherein the exhaust port extends over a length corresponding to the process field in a vertical direction.  
   
   
       17 . The apparatus according to  claim 16 , wherein, in order to deposit the thin film on the target substrates, the control section alternately executes: 
 a first step of performing supply of the first process gas to the process field;    a second step of stopping supply of the first and second process gases to the process field;    a third step of performing supply of the second process gas to the process field; and    a fourth step of stopping supply of the first and second process gases to the process field,    while continuously exhausting gas from inside the process container from the first step to the fourth step.    
   
   
       18 . The apparatus according to  claim 17 , wherein the control section continuously performs supply of the blocking gas to the marginal space from the blocking gas supply circuit from the first step to the fourth step.  
   
   
       19 . The apparatus according to  claim 17 , wherein the control section stops supply of the blocking gas to the marginal space from the blocking gas supply circuit in each of the second and fourth steps.  
   
   
       20 . The apparatus according to  claim 17 , wherein the control section sets each of the second and fourth steps to have a preceding period and a subsequent period respectively perform and stop supply of the blocking gas to the marginal space from the blocking gas supply circuit.