US2007224907A1PendingUtilityA1

Electro-optical device and electronic apparatus

Assignee: SEIKO EPSON CORPPriority: Oct 25, 2002Filed: May 16, 2007Published: Sep 27, 2007
Est. expiryOct 25, 2022(expired)· nominal 20-yr term from priority
H10K 59/873H10K 59/805H10K 50/844H10K 59/1201H05B 33/04H10K 2102/00H10K 2102/3026H10K 59/00H10K 50/11H10K 59/122H10K 50/84H10K 50/8445H10K 59/131H10K 59/12H10K 2101/80H10K 50/822H10K 50/82H10K 50/865H10K 59/88H10K 50/805
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Claims

Abstract

The invention provides an electro-optical device that has luminescent elements of a long lifetime by preventing oxygen or moisture from entering to luminescent layers or electrodes even in case of an electrode-optical device provided with a number of luminescent layers and an electronic apparatus provided with the electro-optical device. The invention can include an electro-optical device having first electrodes on a base body, a plurality of element areas including element layers including at least one functional layers disposed above the first electrodes, a second electrode formed above the element layers, a surrounding sections disposed on the base body so as to cover outer sides of the element layers included the element areas in the nearest proximity of the periphery of the base body, and a gas-barrier layer covering over the second electrode. Outer sides of the surrounding sections can be covered with the second electrode, and the gas-barrier layer can be in contact with the base body.

Claims

exact text as granted — not AI-modified
1 . A method of manufacturing an electro-optical device, the method comprising the steps of: 
 forming a plurality of first electrodes above a base body;    forming element layers, each of the element layers dispose above one of the plurality of first electrodes;    forming a surrounding section, the surrounding section surrounding the element layers;    forming a second electrode above the element layers; and    forming a gas-barrier layer so as to cover the second electrode, the step of forming the gas-barrier layer being comprising steps of:    forming a first layer by physical vapor deposition; and    forming a second layer on the first layer by chemical vapor deposition.    
   
   
       2 . The method of manufacturing an electro-optical device according to  claim 1 , the gas-barrier layer being an inorganic compound.  
   
   
       3 . The method of manufacturing an electro-optical device according to  claim 1 , the gas-barrier layer being an silicon compound.  
   
   
       4 . The method of manufacturing an electro-optical device according to  claim 3 , at least face that in contact with the gas-barrier layer of the second electrode comprising an inorganic oxide.  
   
   
       5 . The method of manufacturing an electro-optical device according to  claim 1 , a outer sides of the surrounding section being covered with the second electrode and the gas-barrier layer.  
   
   
       6 . The method of manufacturing an electro-optical device according to  claim 1 , the gas-barrier layer being in contact with the base body.

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