Organic thin-film transistor manufacturing method, organic thin-film transistor, and organic thin-film transistor sheet

Abstract

An organic thin-film transistor is disclosed. The transistor may include a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer protective layer, a source electrode, and a drain electrode, wherein a layer formed on the organic semiconductor layer may have a light transmittance of not more than 10%.

1 . An organic thin-film transistor comprising: 
 a substrate;    a gate electrode formed on the substrate;    a gate insulating layer formed on the substrate;    an organic semiconductor layer protective layer with a through hole formed on the semiconductor layer; and    a source electrode and a drain electrode, each electrode being provided so as to contact the organic semiconductor layer through the through hole;    wherein a layer formed on the organic semiconductor layer has a light transmittance of not more than 10%.    
   
   
       2 . The organic thin-film transistor of  claim 1 , wherein the organic semiconductor layer protective layer is formed so as to contact the organic semiconductor layer.  
   
   
       3 . The organic thin-film transistor of  claim 1 , wherein at least a part of the source electrode and at least a part of the drain electrode exist in the through hole.  
   
   
       4 . The organic thin-film transistor of  claim 1 , wherein the through hole has a first hole and a second hole each separated, the source electrode being provided so as to contact the organic semiconductor layer through the first hole, and the drain electrode being provided so as to contact the organic semiconductor layer through the second hole.  
   
   
       5 . The organic thin-film transistor of  claim 1 , wherein the organic semiconductor layer has a light transmittance of not more than 10%.  
   
   
       6 . The organic thin-film transistor of  claim 1 , wherein the organic semiconductor layer protective layer is formed by coating an aqueous hydrophilic polymer solution or an aqueous hydrophilic polymer dispersion.  
   
   
       7 . The organic thin-film transistor of  claim 1 , wherein the source electrode is formed from a conductive paste containing metal particles, a conductive ink or a metal film precursor.  
   
   
       8 . The organic thin-film transistor of  claim 1 , wherein the drain electrode is formed from a conductive paste containing metal particles, a conductive ink or a metal film precursor.  
   
   
       9 . The organic thin-film transistor of  claim 1 , wherein the source electrode contains a conductive polymer.  
   
   
       10 . The organic thin-film transistor of  claim 1 , wherein the drain electrode contains a conductive polymer.  
   
   
       11 . The organic thin-film transistor of  claim 1 , wherein the substrate is comprised of a resin.  
   
   
       12 . An organic thin-film transistor sheet comprising: 
 at least two organic thin-film transistors comprising: 
 a substrate;  
 a gate electrode formed on the substrate;  
 a gate insulating layer formed on the substrate;  
 an organic semiconductor layer protective layer with a through hole formed on the semiconductor layer; and  
 a source electrode and a drain electrode, each electrode being provided so as to contact the organic semiconductor layer through the through hole;  
 wherein a layer formed on the organic semiconductor layer has a light transmittance of not more than 10%.  
   
   
   
       13 . An organic thin-film transistor comprising: 
 a substrate;    a subbing layer formed on the substrate;    a gate electrode formed on the subbing layer;    a gate insulating layer formed on the subbing layer;    an organic semiconductor layer formed on the gate insulating layer;    a source electrode formed on the organic semiconductor layer;    a drain electrode formed on the organic semiconductor layer; and    an organic semiconductor layer protective layer formed on the organic semiconductor layer;    wherein a layer formed on the organic semiconductor layer has a light transmittance of not more than 10%.    
   
   
       14 . An organic thin-film transistor comprising: 
 a substrate;    a subbing layer formed on the substrate;    an organic semiconductor layer formed on the subbing layer;    a source electrode formed on the organic semiconductor layer;    a drain electrode formed on the organic semiconductor layer;    an organic semiconductor layer protective layer formed on the organic semiconductor layer;    a gate insulating layer formed on the organic    semiconductor layer protective layer; and    a gate electrode formed on the gate insulating layer;    wherein a layer formed on the organic semiconductor layer has a light transmittance of not more than 10%.