Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece

Abstract

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

1 - 57 . (canceled)  
   
   
       58 . A method for processing microelectronic workpieces, comprising: 
 performing an electrochemical deposition process on a first microelectronic workpiece at a process chamber using a set of processing parameters that includes directing electrical current to multiple electrodes;    detecting a characteristic of the first microelectronic workpiece at a metrology unit;    based on the characteristic of the first microelectronic workpiece detected at the metrology unit, changing at least part of the set of processing parameters, wherein changing at least part of the set of processing parameters includes changing electrical power provided to the multiple electrodes; and    performing an electrochemical deposition process on a second microelectronic workpiece at the process chamber using the changed set of processing parameters.    
   
   
       59 . The method of  claim 58  wherein detecting a characteristic includes detecting a uniformity with which conductive material was applied to the first microelectronic workpiece.  
   
   
       60 . The method of  claim 58  wherein detecting a characteristic includes detecting a thickness of a conductive material of the first microelectronic workpiece.  
   
   
       61 . The method of  claim 58  wherein detecting a characteristic of the first microelectronic workpiece at the metrology unit includes detecting a characteristic of the first microelectronic workpiece at a metrology unit that is carried by a processing tool that also carries the process chamber.  
   
   
       62 . The method of  claim 58  wherein directing electrical current to multiple electrodes includes directing electrical current to multiple electrodes that are spaced apart from the first microelectronic workpiece by different distances.  
   
   
       63 . The method of  claim 58  wherein directing electrical current to multiple electrodes includes directing electrical current to at least one electrode positioned to generate a virtual electrode.  
   
   
       64 . The method of  claim 58  wherein changing at least part of the set of processing parameters includes changing at least part of the set of processing parameters via software control of electrical power provided to the electrodes.  
   
   
       65 . The method of  claim 58  wherein detecting a characteristic of the first microelectronic workpiece includes detecting a characteristic of a seed layer of the first microelectronic workpiece.  
   
   
       66 . The method of  claim 58  wherein detecting a characteristic of the first microelectronic workpiece includes detecting a uniformity of a seed layer of the first microelectronic workpiece.  
   
   
       67 . A method for processing microelectronic workpieces, comprising: 
 performing an electrochemical deposition process on a first microelectronic workpiece at a process chamber using a set of processing parameters that includes directing electrical current to multiple electrodes;    detecting a characteristic of the first microelectronic workpiece at a metrology unit;    based on the characteristic of the first microelectronic workpiece detected at the metrology unit, changing at least part of the set of processing parameters, wherein changing at least part of the set of processing parameters includes changing at least part of the set of processing parameters via software control of electrical power provided to the electrodes; and    performing an electrochemical deposition process on a second microelectronic workpiece at the process chamber using the changed set of processing parameters.    
   
   
       68 . The method of  claim 67  wherein detecting a characteristic includes detecting a uniformity with which conductive material was applied to the first microelectronic workpiece.  
   
   
       69 . The method of  claim 67  wherein detecting a characteristic includes detecting a thickness of a conductive material of the first microelectronic workpiece.  
   
   
       70 . The method of  claim 67  wherein detecting a characteristic of the first microelectronic workpiece at the metrology unit includes detecting a characteristic of the first microelectronic workpiece at a metrology unit that is carried by a processing tool that also carries the process chamber.  
   
   
       71 . The method of  claim 67  wherein directing electrical current to multiple electrodes includes directing electrical current to multiple electrodes that are spaced apart from the first microelectronic workpiece by different distances.  
   
   
       72 . The method of  claim 67  wherein directing electrical current to multiple electrodes includes directing electrical current to at least one electrode positioned to generate a virtual electrode.  
   
   
       73 . The method of  claim 67  wherein detecting a characteristic of the first microelectronic workpiece includes detecting a characteristic of a seed layer of the first microelectronic workpiece.  
   
   
       74 . The method of  claim 67  wherein detecting a characteristic of the first microelectronic workpiece includes detecting a uniformity of a seed layer of the first microelectronic workpiece.