US2007215479A1PendingUtilityA1

Method for monitoring the filling performance of copper plating formula for microvia filling

Assignee: ROCKWOOD ELECTROCHEMICALS ASIAPriority: Mar 15, 2006Filed: Mar 15, 2006Published: Sep 20, 2007
Est. expiryMar 15, 2026(expired)· nominal 20-yr term from priority
H10P 14/47H10W 20/056C25D 21/12C25D 3/38H05K 1/0268H05K 3/423H05K 2201/09563H05K 2203/163
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Claims

Abstract

A method for monitoring the filling performance of a copper plating formula for microvia filling includes measuring a first potential value at a first rotation speed and a second potential value at a second rotation speed with a Cu-RDE of a plating solution. Then, a potential difference is obtained by subtracting the potential measured at the second rotation speed from the first rotation speed. The filling performance is defined by the potential difference; that is, a high potential difference indicates a good filling performance.

Claims

exact text as granted — not AI-modified
1 . A method for monitoring the filling performance of a copper plating formula for microvia filling, comprising: 
 measuring a first potential value of the copper plating formula by using a working electrode at a first rotation speed;    measuring a second potential value of the copper plating formula by using the working electrode at a second rotation speed that is different from the first rotation speed; and    calculating a potential difference between the first potential and the second potential, wherein a larger potential difference indicates a better filling performance for microvia filling.    
   
   
       2 . The method of  claim 1 , wherein the filling performance is defined as (the height of the copper deposition in the microvia÷the height of via)×100%.  
   
   
       3 . The method of  claim 1 , wherein the copper plating formula is kept at a temperature of 20˜30° C.  
   
   
       4 . The method of  claim 1 , wherein the copper plating formula comprises cupric sulfate (CuSO 4 ) and sulfuric acid (H 2 SO 4 ).  
   
   
       5 . The method of  claim 1 , wherein the working electrode is a copper rotation disk electrode (Cu-RDE).  
   
   
       6 . The method of  claim 5 , wherein the Cu-RDE is kept at a current density of 10˜20 ASF.  
   
   
       7 . The method of  claim 1 , wherein the first potential value is a potential measured by a working electrode relative to a reference electrode.  
   
   
       8 . The method of  claim 1 , wherein the first rotation speed is 50˜200 rpm.  
   
   
       9 . The method of  claim 1 , wherein the second potential value is a potential measured by a working electrode relative to a reference electrode.  
   
   
       10 . The method of  claim 1 , wherein the second rotation speed is 700˜3000 rpm.

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