Tungsten Plug Corrosion Prevention Method Using Water

Abstract

Disclosed herein is a method of making integrated circuits. In one embodiment the method includes forming tungsten plugs in the integrated circuit and forming electrically conductive interconnect lines in the integrated circuit after formation of the tungsten plugs. At least one tungsten plug is electrically connected to at least one electrically conductive interconnect line. Thereafter at least one electrically conductive interconnect line is contacted with water for a period of time less than 120 minutes.

1 - 10 . (canceled)  
   
   
       11 . An integrated circuit partially formed by: 
 forming a tungsten plug in a dielectric layer;    forming an electrically conductive interconnect line on the dielectric layer after formation of the tungsten plug, wherein the tungsten plug is electrically connected to the electrically conductive interconnect line;    contacting the electrically conductive interconnect line with water after formation of the electrically conductive interconnect line;    wherein the electrically conductive interconnect line is contacted with the water for less than 120 minutes.    
   
   
       12 . The integrated circuit of  claim 11  wherein the water is degasified and deionized.  
   
   
       13 . The integrated circuit of  claim 11  wherein the water is deionized but not degasified.  
   
   
       14 . The integrated circuit of  claim 11  wherein the water is degasified but not deionized.  
   
   
       15 . The integrated circuit of  claim 11  wherein the water is neither degasified nor deionized.  
   
   
       16 . The integrated circuit of  claim 11  wherein the water has a pH that is at or near neutral.  
   
   
       17 . The integrated circuit of  claim 11  wherein the electrically conductive interconnect line is contacted with the water for less than 60 minutes.  
   
   
       18 . The integrated circuit of  claim 11  wherein the electrically conductive interconnect line is contacted with water for less than 15 minutes.  
   
   
       19 . The integrated circuit of  claim 11  wherein the electrically conductive interconnect line is formed from a metal stack that includes one or more of titanium, titanium nitride, aluminum, an aluminum copper alloy, or an aluminum silicon copper alloy.  
   
   
       20 . The integrated circuit of  claim 11  further formed by contacting the electrically conductive interconnect line with a solution to remove residual polymer after the electrically conductive interconnect line is contacted with the water.  
   
   
       21 . The method of claim  10  wherein the solution is alkaline or basic solution having a pH of 10-12.  
   
   
       22 . The integrated circuit of  claim 20  wherein the solution is alkaline or basic solution having a pH of 10-12.  
   
   
       23 . A method comprising: 
 forming a tungsten plug in a dielectric layer;    forming an electrically conductive interconnect line on the dielectric layer after formation of the tungsten plug, wherein the tungsten plug is electrically connected to the electrically conductive interconnect line;    contacting the electrically conductive interconnect line with water after formation of the electrically conductive interconnect line;    wherein the electrically conductive interconnect line is contacted with the water for less than 120 minutes;    wherein the electrically conductive interconnect line is formed from a metal stack that is comprised of titanium, titanium nitride, and an aluminum copper alloy consisting of 99.5% aluminum and 0.5% copper.    
   
   
       24 . The integrated circuit of  claim 11  wherein the electrically conductive interconnect line is formed from a metal stack that is comprised of titanium, titanium nitride, and an aluminum copper alloy consisting of 99.5% aluminum and 0.5% copper.  
   
   
       25 . A method comprising: 
 forming a tungsten plug in a dielectric layer;    forming an electrically conductive interconnect line on the dielectric layer after formation of the tungsten plug, wherein the tungsten plug is electrically connected to the electrically conductive interconnect line;    contacting the electrically conductive interconnect line with water after formation of the electrically conductive interconnect line;    wherein the electrically conductive interconnect line is contacted with the water for less than 120 minutes;    contacting the tungsten plug with the water after formation of the electrically conductive interconnect line.    
   
   
       26 . The integrated circuit of  claim 11  further formed by contacting the tungsten plug with the water after formation of the electrically conductive interconnect line.  
   
   
       27 . The method of  claim 23  wherein the electrically conductive interconnect line is contacted with the water for less than 60 minutes.  
   
   
       28 . The method of  claim 23  wherein the electrically conductive interconnect line is contacted with the water for less than 15 minutes.  
   
   
       29 . The method of  claim 25  wherein the electrically conductive interconnect line is contacted with the water for less than 60 minutes.  
   
   
       30 . The method of  claim 25  wherein the electrically conductive interconnect line is contacted with the water for less than 15 minutes.