Substrate processing apparatus for resist film removal

Abstract

Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

1 . A substrate processing apparatus comprising: 
 a processing vessel that accommodate a substrate to process the substrate therein;    a heater heating the substrate in the processing vessel;    a water vapor supply unit configured to supply a water vapor into the processing vessel;    an ozone gas supply unit configured to supply an ozone gas into the processing vessel;    a rinsing unit configured to rinse the substrate processed with the water vapor and the ozone gas in the processing vessel; and    a substrate carrier configured to carry the substrate from the processing vessel to the rinsing unit.    
   
   
       2 . The substrate processing apparatus according to  claim 1 , further comprising a N 2  gas supply unit configured to supply a N 2  gas into the processing vessel.  
   
   
       3 . The substrate processing apparatus according to  claim 1 , further comprising: 
 a discharge line through which an atmosphere in the processing vessel is discharged;    a flow controller provided in the discharge line; and    a control unit configured to control the flow controller to pressurize the atmosphere in the processing vessel.    
   
   
       4 . The substrate processing apparatus according to  claim 3 , the heater being controlled by the control unit to adjust a temperature of the substrate in the processing vessel to a temperature higher than a dew point of the water vapor and lower than a temperature of the water vapor.  
   
   
       5 . The substrate processing apparatus according to  claim 3 , further comprising a pressure sensor configured to detect a pressure in the processing vessel, wherein 
 the flow controller is controlled by the control unit on the basis of the pressure detected by the pressure sensor.