Vapor phase deposition apparatus and support table

Abstract

A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.

1 . A vapor phase deposition apparatus comprising:
 a chamber;   a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit;   a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate;   a first flow path configured to supply a gas to form a film into the chamber; and   a second flow path configured to exhaust the gas from the chamber.   
   
   
       2 . The vapor phase deposition apparatus according to  claim 1 , wherein
 a material of the first support unit uses a material having a heat conductivity higher than that of a material used in the second support unit.   
   
   
       3 . The vapor phase deposition apparatus according to  claim 2 , wherein
 silicon carbide (SiC) is used as a material of the first support unit.   
   
   
       4 . The vapor phase deposition apparatus according to  claim 3 , wherein
 silicon nitride (Si 3 N 4 ) is used as a material of the second support unit.   
   
   
       5 . The vapor phase deposition apparatus according to  claim 2 , wherein
 a notched portion is formed on at least one upper surface side of the first support unit and the second support unit at a position which the first support unit and the second support unit are connected to each other.   
   
   
       6 . The vapor phase deposition apparatus according to  claim 2 , wherein
 a notched portion is formed in the first support unit.   
   
   
       7 . The vapor phase deposition apparatus according to  claim 6 , wherein
 the notched portion is formed in a surface being in contact with the back side surface of the substrate.   
   
   
       8 . The vapor phase deposition apparatus according to  claim 1 , wherein
 a notched portion is formed in the first support unit.   
   
   
       9 . The vapor phase deposition apparatus according to  claim 8 , wherein
 the notched portion is formed in a surface being in contact with the back side surface of the substrate.   
   
   
       10 . The vapor phase deposition apparatus according to  claim 1 , wherein
 the first support unit has an annular projecting portion extending on the back side at an outer peripheral portion, and   the second support unit has an opening formed on an inner peripheral side, is in contact with a distal end portion of the projecting portion on a bottom surface of the opening to support the first support unit.   
   
   
       11 . The vapor phase deposition apparatus according to  claim 1 , wherein
 the first support unit has a plurality of projecting portions formed on a back surface;   the second support unit has an opening formed on an inner peripheral side, is in contact with a distal end portion of the projecting portion on a bottom surface of the opening to support the first support unit.   
   
   
       12 . The vapor phase deposition apparatus according to  claim 11 , wherein
 the first support unit further has a plurality of second projecting portions which are in contact with a side surface of the opening when the first support unit substantially moves in a horizontal direction and which extends to an outer peripheral side.   
   
   
       13 . The vapor phase deposition apparatus according to  claim 11 , wherein
 the second support unit has a plurality of second projecting portions which are in contact with a side surface of the first support unit when the first support unit substantially moves in a horizontal direction and which extend to an inner peripheral side.   
   
   
       14 . The vapor phase deposition apparatus according to  claim 1 , wherein
 the second support unit has an opening formed on an inner peripheral side and a plurality of projecting portions formed on a bottom surface of the opening, and is in contact with a back surface of the first support unit at a distal end portion of the projecting portion to support the first support unit.   
   
   
       15 . The vapor phase deposition apparatus according to  claim 14 , wherein
 the first support unit has a plurality of second projecting portions which are in contact with a side surface of the opening when the first support unit substantially moves in a horizontal direction and which extend to an outer peripheral side.   
   
   
       16 . The vapor phase deposition apparatus according to  claim 14 , wherein
 the second support unit has a plurality of second projecting portions which are in contact with a side surface of the first support unit when the first support unit substantially moves in a horizontal direction and which extend to an inner peripheral side.   
   
   
       17 . The vapor phase deposition apparatus according to  claim 1 , wherein
 the first and second support units are formed as physically different parts, and the first support unit is placed on a part of the second support unit.   
   
   
       18 . A vapor phase deposition apparatus comprising:
 a chamber;   a support table arranged in the chamber and formed a first opening which a substrate is placed on its bottom surface, and a second opening what is an annular opening and is located on an outer peripheral side of the first opening and inside an outer peripheral side;   a heat source arranged at a position having a distance from the back side surface of the substrate, the distance being larger than a distance between the substrate and the support table, and which heats the substrate;   a first flow path configured to supply a gas to form a film into the chamber; and   a second flow path configured to exhaust the gas from the chamber.   
   
   
       19 . The vapor phase deposition apparatus according to  claim 18 , wherein
 a thickness of a portion of the support table where the second opening is formed is smaller than a thickness of an inner portion of the second opening.   
   
   
       20 . A support table for placing a substrate thereon in a chamber held in a vapor phase deposition apparatus, comprising:
 a first support unit being in contact with the substrate; and   a second support portion connected to the first support portion and made of a material having a heat conductivity lower than that of a material used in the first support unit.