US2007202419A1PendingUtilityA1

Method for Producing Phase Shifter Masks

39
Individually held — no corporate assignee on recordPriority: Jul 4, 2002Filed: Apr 30, 2007Published: Aug 30, 2007
Est. expiryJul 4, 2022(expired)· nominal 20-yr term from priority
Inventors:Christof Matthias SchilzKlaus Eisner
G03F 1/56G03F 1/26G03F 1/74G03F 1/38
39
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Claims

Abstract

In a method for manufacturing a mask, a first area around a defect in a mask is coated with an organic material using an electron beam. The organic material is hardened in a second smaller area around the defect using the electron beam. Excess portions of the organic material are then removed.

Claims

exact text as granted — not AI-modified
1 . A method for manufacturing a mask, the method comprising: 
 providing a mask with a defect;    coating a first area around the defect with an organic material;    hardening the organic material in a second smaller area around the defect using an electron beam; and    removing non-hardened portions of the organic material.    
   
   
       2 . The method according to  claim 1 , wherein coating the organic material comprises depositing the organic material from a gaseous phase.  
   
   
       3 . The method according to  claim 1 , further comprising detecting the defect in the mask.  
   
   
       4 . The method according to  claim 1 , wherein hardening the organic material comprises scanning the second smaller area with the electron beam.  
   
   
       5 . The method according to  claim 4 , wherein the scanning is performed in rows and columns.  
   
   
       6 . The method according to  claim 1 , wherein hardening the organic material comprises decomposing the coating of the organic material.  
   
   
       7 . The method according to  claim 6 , wherein hardening the organic material in the second area is reinforced from a diffusion of organic compounds from the first area.  
   
   
       8 . The method according to  claim 1 , wherein the mask is a phase shifter mask.  
   
   
       9 . The method according to  claim 8 , wherein the defect is located in a half tone layer of the phase shifter mask.  
   
   
       10 . The method according to  claim 1 , wherein the defect is located in an opaque area of the mask.  
   
   
       11 . The method according to  claim 1 , wherein the organic material comprises an organic compound.  
   
   
       12 . The method according to  claim 11 , wherein the organic compound comprises an aromatic compound.  
   
   
       13 . The method according to  claim 12 , wherein the organic compound has a high adsorption coefficient.  
   
   
       14 . The method according to  claim 11 , wherein a concentration gradient of the organic compound in the organic material is increased in the second area.  
   
   
       15 . The method according to  claim 1 , wherein removing the non-hardened portions comprises UV cleaning.  
   
   
       16 . The method according to  claim 1 , wherein the mask is a mask for use in 157 nm lithography.  
   
   
       17 . The method according to  claim 1 , wherein the organic material is free of silicon organic compounds.  
   
   
       18 . A method for repairing a mask, the method comprising: 
 providing a mask;    detecting a defect on the mask;    coating a wide area around the defect with an organic material;    hardening the organic material in an immediate area around the defect using an electron beam; and    removing the organic material outside the immediate area around the defect.    
   
   
       19 . The method according to  claim 18 , where coating the wide area comprises depositing a coating of a gaseous organic compound.  
   
   
       20 . The method according to  claim 18 , wherein hardening the organic material comprises scanning the immediate area with the electron beam thereby decomposing the organic material.  
   
   
       21 . The method according to  claim 20 , wherein hardening the organic material in the immediate area is reinforced from a diffusion of organic compounds from the wide area.  
   
   
       22 . The method according to  claim 18 , wherein removing the organic material outside the immediate area comprises leaving the organic material inside the immediate area.  
   
   
       23 . The method according to  claim 18 , wherein coating the wide area comprises depositing the organic material from a gaseous phase.  
   
   
       24 . The method according to  claim 18 , wherein the mask is a phase shifter mask.  
   
   
       25 . The method according to  claim 24 , wherein the mask is a mask for use in 157 nm lithography.  
   
   
       26 . The method according to  claim 18 , wherein the organic material comprises an aromatic compound.  
   
   
       27 . The method according to  claim 18 , wherein the organic material is free of silicon-organic compounds.

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