Semiconductor device and method of fabricating the same

Abstract

According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×10 22 atoms/cm 3 .

1 .- 14 . (canceled)  
   
   
       15 . A semiconductor device comprising: 
 a gate insulating film selectively formed on a predetermined region of a semiconductor substrate;    a gate electrode formed on said gate insulating film; and    a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode,    wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×10 22  atoms/cm 3 .    
   
   
       16 . A device according to  claim 15 , wherein said gate insulating film is an insulating film containing at least a metal, oxygen, and nitrogen.  
   
   
       17 . A device according to  claim 15 , wherein said gate insulating film is made of a hafnium silicon oxynitride film, and has a specific dielectric constant higher than that of silicon dioxide.