US2007190775A1PendingUtilityA1

Low selectivity deposition methods

54
Individually held — no corporate assignee on recordPriority: Aug 21, 2000Filed: Mar 19, 2007Published: Aug 16, 2007
Est. expiryAug 21, 2020(expired)· nominal 20-yr term from priority
Inventors:Garry Mercaldi
H10P 14/69433H10P 14/69391H10P 14/6339H10P 14/662H10P 14/69393H10P 14/6334H10D 1/716H10D 1/712H10D 1/042C23C 16/45525C23C 16/0272
54
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Claims

Abstract

A deposition method includes forming a nucleation layer over a substrate, forming a layer of a first substance at least one monolayer thick chemisorbed on the nucleation layer, and forming a layer of a second substance at least one monolayer thick chemisorbed on the first substance. The chemisorption product of the first and second substance may include silicon and nitrogen. The nucleation layer may comprise silicon nitride. Further, a deposition method may include forming a first part of a nucleation layer on a first surface of a substrate and forming a second part of a nucleation layer on a second surface of the substrate. A deposition layer may be formed on the first and second parts of the nucleation layer substantially non-selectively on the first part of the nucleation layer compared to the second part. The first surface may be a surface of a borophosphosilicate glass layer. The second surface may be a surface of a rugged polysilicon layer. The first and second part of the nucleation layer may be formed simultaneously.

Claims

exact text as granted — not AI-modified
1 - 8 . (canceled)  
   
   
       9 . A low selectivity deposition method comprising: 
 forming a first part of a nucleation layer on a first surface of a substrate;    forming a second part of a nucleation layer on a second surface of the substrate, a thickness of the nucleation layer being less than about 20 Angstroms; and    forming a deposition layer on the first and second parts of the nucleation layer substantially non-selectively on the first part of the nucleation layer compared to the second part, even though the first and second surfaces of the substrate exhibit a property of the deposition layer forming less readily on the first surface compared to the second surface.    
   
   
       10 . The deposition method of  claim 9  wherein the forming the first and the second part of the nucleation layer occurs by chemical vapor deposition.  
   
   
       11 . The deposition method of  claim 9  wherein the forming the first and the second part of the nucleation layer occurs by atomic layer deposition.  
   
   
       12 . The deposition method of  claim 11  wherein the atomic layer deposition comprises contacting the substrate with only one precursor specie at a time.  
   
   
       13 . (canceled)  
   
   
       14 . The deposition method of  claim 9  wherein the forming the first and the second part of the nucleation layer occurs simultaneously and the nucleation layer forms substantially non-selectively on the first surface of the substrate compared to the second surface.  
   
   
       15 . (canceled)  
   
   
       16 . (canceled)  
   
   
       17 . The deposition method of  claim 9  wherein the first and the second parts of the nucleation layer comprise silicon nitride, aluminum oxide, or tantalum oxide.  
   
   
       18 . (canceled)  
   
   
       19 . (canceled)  
   
   
       20 . The deposition method of  claim 9  wherein the first and the second parts of the nucleation layer comprise silicon nitride and the first part further comprises oxygen.  
   
   
       21 . The deposition method of  claim 9  wherein a thickness of the nucleation layer comprises less than about 6 Angstroms.  
   
   
       22 . The deposition method of  claim 21  wherein the thickness comprises about 2.5 Angstroms.  
   
   
       23 . (canceled)  
   
   
       24 . (canceled)  
   
   
       25 . The deposition method of  claim 9  wherein the deposition layer comprises a chemisorbed first specie at least one monolayer thick and the method further comprises forming a layer at least one monolayer thick of a chemisorbed second specie different from the first specie on the first specie layer.  
   
   
       26 - 29 . (canceled)  
   
   
       30 . The deposition method of  claim 25  wherein the nucleation layer comprises a material also comprised by the first and second specie layers combined.  
   
   
       31 . A low selectivity deposition method comprising: 
 simultaneously forming a first part of a nucleation layer on an insulative oxide material and a second part of the nucleation layer on a semiconductive material, a thickness of the nucleation layer being less than about 20 Angstroms; and    contacting the nucleation layer with an initiation precursor and forming an initiation layer at least one monolayer thick on the first and second parts of the nucleation layer substantially non-selectively on the first part of the nucleation layer compared to the second part.    
   
   
       32 . The deposition method of  claim 31  wherein the initiation layer consists essentially of a monolayer.  
   
   
       33 . (canceled)  
   
   
       34 . The deposition method of  claim 31  wherein the first and the second parts of the nucleation layer comprise silicon nitride and the first part further comprises oxygen.  
   
   
       35 . The deposition method of  claim 31  wherein a thickness of the nucleation layer comprises less than about 6 Angstroms.  
   
   
       36 . (canceled)  
   
   
       37 . The deposition method of  claim 31  wherein the insulative oxide exhibits a property of chemisorbing the initiation precursor at a slower rate compared to the semiconductive material.  
   
   
       38 . The deposition method of  claim 31  further comprising contacting the initiation layer with at least one deposition precursor and forming a deposition layer at least one monolayer thick on the initiation layer.  
   
   
       39 - 51 . (canceled)  
   
   
       52 . A low selectivity deposition method comprising: 
 placing a substrate in a deposition chamber;    forming a first part of a nucleation layer on a first surface of the substrate in the chamber, the first surface including borophosphosilicate glass;    forming a second part of a nucleation layer on a second surface of the substrate in the chamber, the second surface including polysilicon; and    without removing the substrate from the chamber, forming a layer at least one monolayer thick of a first chemisorbed precursor on the first and second parts of the nucleation layer substantially non-selectively on the first part of the nucleation layer compared to the second part.    
   
   
       53 . The deposition method of  claim 52  wherein the forming the first and the second part of the nucleation layer occurs simultaneously and the nucleation layer forms substantially non-selectively on the first surface of the substrate compared to the second surface.  
   
   
       54 . (canceled)  
   
   
       55 . The deposition method of  claim 52  wherein a thickness of the nucleation layer comprises less than about 6 Angstroms.  
   
   
       56 - 59 . (canceled)

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