US2007187838A1PendingUtilityA1

Pad structure for bonding pad and probe pad and manufacturing method thereof

Assignee: NANYA TECHNOLOGY CORPPriority: Mar 21, 2002Filed: Mar 27, 2007Published: Aug 16, 2007
Est. expiryMar 21, 2022(expired)· nominal 20-yr term from priority
Inventors:Shu-Liang Nin
H10W 72/936H10W 72/952H10W 72/951H10W 72/932H10W 46/301H10W 46/501H10W 46/601H10W 46/603H10W 46/503H10W 46/101H10W 72/019H10W 46/00H10P 74/277
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Claims

Abstract

A mark-shaped pad. A bonding pad structure with at least one mark-shaped bonding pad comprises: a bottom metal layer disposed over the surface of a rectangular semiconductor substrate to connect the circuit electrically, an inter-metal dielectric layer disposed over the bottom metal layer, metal plugs formed in the inter-metal dielectric layer to connect with the bottom metal layer, a top metal layer disposed over the inter-metal dielectric layer connecting with the metal plugs, and a passivation layer disposed over the top metal layer with openings to expose the top metal layer portions as bonding pads, wherein at least one bonding pad is mark-shaped, e.g. , , or , to indicate the orientation of the bonding pads on the rectangular semiconductor substrate.

Claims

exact text as granted — not AI-modified
1 .- 14 . (canceled)  
   
   
       15 . A method for forming a bonding pad structure on a surface of a semiconductor substrate with a circuit therein, comprising: 
 disposing a bottom metal layer over the surface of the semiconductor substrate to connect the circuit electrically;    disposing an inter-metal dielectric layer over the bottom metal layer;    forming a plurality of metal plugs in the inter-metal dielectric layer to connect with the bottom metal layer;    disposing a top metal layer over the inter-metal dielectric layer to connect with the metal plugs;    disposing a passivation layer over the top metal layer; and    defining a plurality of openings on the passivation layer to expose the top metal layer portions as bonding pads, wherein at least one bonding pad is defined as a mark-shape to indicate the orientation of the bonding pads on the semiconductor substrate.    
   
   
       16 . The method as claimed as in  claim 15 , wherein the mark-shaped bonding pad is defined as a   shape.  
   
   
       17 . The method as claimed as in  claim 15 , wherein the mark-shaped bonding pad is defined as a   shape.  
   
   
       18 . The method as claimed as in  claim 15 , wherein the mark-shaped bonding pad is defined as a cross shape    
   
   
       19 . The method as claimed as in  claim 15 , wherein the mark-shaped bonding pad is defined as a   shape.

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