Plasma Enhanced Deposited, Fully Oxidized PSG Film

Abstract

A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may be a dual frequency energy. The gas rates and pressure are selected to produce a plasma enhanced deposited oxide film on a substrate having a Si—O—Si bond peak absorbance in the IR spectrum of at least 1092 cm −1 .

1 . An integrated circuit comprising: 
 a substrate;    a plasma enhanced deposited silicon oxide film on the substrate; and    the silicon oxide film having a peak absorbance in the IR spectrum of at least 1092 cm −1 .    
   
   
       2 . The integrated circuit of  claim 1 , wherein the silicon oxide film uniformity has a standard deviation of 0.7% maximum.  
   
   
       3 . The integrated circuit of  claim 2 , wherein the silicon oxide film has a phosphorus content in the range of 6% to 8%.  
   
   
       4 . The integrated circuit of  claim 1 , wherein the silicon oxide film has a phosphorus content in the range of 6% to 8%.