Semiconductor devices and methods of fabricating the same

Abstract

The present disclosure provides an example of a semiconductor device. In addition, a method for fabricating a semiconductor device is outlined. The semiconductor device may be fabricated by providing a semiconductor substrate, forming a gate over the substrate, forming diffusion barrier ion regions, forming halo regions, forming a source, and forming a drain.

1 . A semiconductor device comprising; 
 a semiconductor substrate;    a gate formed over the substrate, the gate defining a channel in the substrate having a source side and a drain side;    halo regions formed in the source side and the drain side of the channel wherein the halo regions contact the channel;    halo impurity ions of a first conductivity positioned in at least one of the halo regions;    a source formed in the substrate adjacent to the source side of the channel, wherein the source contains impurity ions of a second conductivity;    a drain formed in the substrate adjacent to the drain side of the channel, wherein the drain contains impurity ions of the second conductivity; and    diffusion barrier ions positioned in at least one of the halo regions.    
   
   
       2 . A semiconductor device as defined by  claim 1 , wherein at least one of the diffusion barrier ions occupies an interstitial site in a crystal lattice of the substrate.  
   
   
       3 . A semiconductor device as defined by  claim 1 , wherein at least one of the diffusion barrier ions is smaller than an atom of the substrate and has corresponding size to the halo impurity ions.  
   
   
       4 . A semiconductor device as defined by  claim 1 , wherein at least one of the diffusion barrier ions is a carbon ion.  
   
   
       5 . The semiconductor device as defined by  claim 1 , wherein at least one of the halo impurity ions is a boron ion.  
   
   
       6 . A semiconductor device as defined by  claim 1 , wherein the halo regions are formed by performing a tilted ion implantation.  
   
   
       7 . A semiconductor device as defined by  claim 1 , wherein the first conductivity is p-type and the second conductivity is n-type.