Semiconductor package suitable for high voltage applications

Abstract

A semiconductor package has a structure in which a leadframe pad to which a semiconductor die is attached and inner leads electrically connected to the leadframe pad are covered by a molded housing, and outer leads extending from the inner leads protrude from a side surface of the molded housing to the outside. The outer leads include a first outer lead disposed in a central portion of the molded housing, second and third outer leads respectively disposed in a right and left of the first outer lead. The second and third outer leads each have bent portions in portions where they are adjacent to the side surface of the molded housing, the bent portions protruding to increase a space between the first outer lead and the bent portions in the molded housing. At least one of the bent portions of the second and third outer leads is covered by an extended portion of the molded housing.

1 - 9 . (canceled)  
   
   
       10 . A semiconductor package having a molded housing comprising: 
 a) first and second leads extending both inside and outside said molded housing, said first lead having a surface between two edges of said lead;    b) said surface having a lateral bend which is inside said molded housing and proximate to an edge of said molded housing abutting said first lead, said lateral bend being in a direction to increase the creepage distance between said surface and said second lead; and    c) said molded housing having an edge that extends on said lateral bend and which substantially follows the contour of said lateral bend.    
   
   
       11 . The semiconductor package of  claim 10  wherein an edge of said molded housing abutting said second lead extends in a direction parallel with said longitudinal axis of said second lead.  
   
   
       12 . The semiconductor package of  claim 10  further including a third lead which is positioned laterally next to said second lead away from said first lead.  
   
   
       13 . The semiconductor Package of  claim 12  wherein said third lead has a surface between two edges of said lead, said surface of said third lead having a lateral bend which is inside said molded housing, said lateral bend in said third lead being in a direction to increase the creepage distance between said surface of said third lead and said second lead, and said molded housing having an edge that extends on said lateral bend of said third lead and which substantially follows the contour of said lateral bend of said third lead.  
   
   
       14 . The semiconductor package of  claim 13  wherein an edge of said molded housing abutting said second lead extends in a direction parallel with the extended edge of said molded housing abutting said third lead.  
   
   
       15 . The semiconductor package of  claim 10  wherein an edge of said molded housing between said first and second leads has an indentation to increase the creepage distance between said first and second leads.  
   
   
       16 . The semiconductor package of  claim 12  wherein an edge of said molded housing between said second and third leads has an indentation to increase the creepage distance between said second and third leads.  
   
   
       17 . A semiconductor package having a molded housing comprising: 
 a) first and second leads extending both inside and outside said molded housing, said first lead having a surface between two edges of said lead;    b) said surface having a bend which is inside said molded housing and proximate to an edge of said molded housing abutting said first lead, said lateral bend being in a direction to increase the creepage distance between said surface and said second lead; and    c) said molded housing having an edge that extends with a substantially constant thickness on said lateral bend of said first lead.    
   
   
       18 . The semiconductor package of  claim 17  wherein an edge of said molded housing abutting said second lead extends in a direction parallel with said longitudinal axis of said second lead.  
   
   
       19 . The semiconductor package of  claim 17  further including a third lead which is positioned laterally next to said second lead away from said first lead.  
   
   
       20 . The semiconductor package of  claim 17  wherein said third lead has a surface between two edges of said third lead, said surface of said third lead having a lateral bend which is inside said molded housing, said lateral bend in said third lead being in a direction to increase the creepage distance between said surface of said third lead and said second lead, and said molded housing having an edge that extends with a substantially constant thickness on said lateral bend of said third lead.  
   
   
       21 . The semiconductor package of  claim 20  wherein an edge of said molded housing abutting said second lead extends in a direction parallel with said longitudinal axis of said second lead equal to the extended edge of said molded housing abutting said third lead.  
   
   
       22 . The semiconductor package of  claim 17  wherein an edge of said molded housing between said first and second leads has an indentation to increase the creepage distance between said first and second leads.  
   
   
       23 . The semiconductor package of  claim 22  wherein an edge of said molded housing between said second and third leads has an indentation to increase the creepage distance between said second and third leads.