Passivative chemical mechanical polishing composition for copper film planarization

Abstract

A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu 2+ , in the bulk CMP composition at the copper/CMP composition interface during CMP processing.

1 - 77 . (canceled)  
   
   
       78 . A CMP composition having a static etch rate of copper in a range from about 200Å min −1  to about 550Å min −1  as measured in the composition further comprising CuSO 4 .5H 2 O at a concentration in a range of from about 0.3 wt. % to about 1 wt. %, based on the total weight of the composition.  
   
   
       79 . The CMP composition of  claim 78 , wherein the composition comprises glycine and at least one corrosion inhibitor.  
   
   
       80 . The CMP composition of  claim 79 , wherein the pH of the composition is 3.5.  
   
   
       81 . The CMP composition of  claim 79 , wherein the composition further comprises oxidizing agent.  
   
   
       82 . The CMP composition of  claim 78 , wherein the static etch rate of copper in contact with the composition comprising CuSO 4 .5H 2 O at concentration of about 0.3 wt. % is in a range from about 200Å min −1  to about 220Å min −1 .  
   
   
       83 . The CMP composition of  claim 78 , comprising glycine and at least one corrosion inhibitor, wherein the static etch rate of copper in contact with the composition comprising CuSO 4 .5H 2 O at concentration of about 0.3 wt. % is in a range from about 200Å min −1  to about 220Å min −1 .  
   
   
       84 . The CMP composition of  claim 78 , comprising glycine, at least one corrosion inhibitor, and oxidizing agent, wherein the static etch rate of copper in contact with the composition having a concentration of corrosion inhibitor of 0.15 wt. % and comprising CuSO 4 .5H 2 O at concentration of about 0.3 wt. % is in a range from about 200Å min −1  to about 220Å min −1  at pH 3.5.  
   
   
       85 . The CMP composition of  claim 79 , wherein the corrosion inhibitor comprises 5-aminotetrazole monohydrate (ATA).  
   
   
       86 . The CMP composition of  claim 81 , wherein the oxidizing agent comprises at least one agent selected from the group consisting of ferric nitrate, ferric ammonium oxalate, ferric ammonium citrate, permanganate salts, peroxyacids, peroxoborate salts, urea-hydrogen peroxide, iodate salts, perchlorate salts, persulfate salts, bromate salts, benzoquinone, chlorate salts, chlorite salts, hypochlorite salts, hypoiodite salts, oxybromide salts, percarbonate salts, periodate salts, ceric salts, chromate and dichromate compounds, cupricyanide and ferricyanide salts, ferriphenanthroline, ferripyridine and ferrocinium.  
   
   
       87 . The CMP composition of  claim 81 , wherein the oxidizing agent comprises hydrogen peroxide.  
   
   
       88 . The CMP composition of  claim 81 , further comprising at least one additional component selected from the group consisting of: another chelating agent in combination with glycine; another corrosion inhibitor in combination with ATA; abrasive; a pH adjusting agent; at least one amine; at least one surfactant; and solvent.  
   
   
       89 . The CMP composition of  claim 79 , comprising glycine, and ATA as the corrosion inhibitor, and further comprising oxidizing agent and solvent.  
   
   
       90 . The CMP composition of  claim 89 , further comprising abrasive.  
   
   
       91 . A method of polishing copper on a substrate having copper thereon, including contacting copper on the substrate under CMP conditions with a CMP composition effective for polishing the copper, wherein the CMP composition has a static etch rate of copper in a range from about 200Å min −1  to about 550Å min −1  as measured in the composition further comprising CuSO 4 .5H 2 O at a concentration in a range of from about 0.3 wt. % to about 1 wt. %, based on the total weight of the composition.  
   
   
       92 . The method of  claim 91 , wherein said CMP composition comprises glycine and at least one corrosion inhibitor.  
   
   
       93 . The method of  claim 92 , wherein said CMP composition further comprises at least one component selected from the group consisting of abrasive, oxidizing agent, solvent, and combinations thereof.  
   
   
       94 . The method of  claim 91 , wherein said copper is on a semiconductor substrate and forms a constituent element of a microelectronic device, wherein said constituent element is selected from the group consisting of interconnects, contacts, conductive vias, metallization, electrodes, and conductive base layers for field emitter components.  
   
   
       95 . The method of  claim 92 , wherein the CMP composition further comprises abrasive, oxidizing agent, and solvent.  
   
   
       96 . The method of  claim 95 , wherein the CMP composition comprises a two-part formulation including a first part comprising abrasive and corrosion inhibitor in an aqueous medium, and a second part comprising oxidizing agent and glycine, said method further comprising mixing the first part and the second part to produce said CMP composition.  
   
   
       97 . The method of  claim 95 , wherein the CMP composition comprises a two-part formulation including a first part comprising abrasive, glycine and corrosion inhibitor in an aqueous medium, and a second part comprising oxidizing agent, said method further comprising mixing the first part and the second part to produce said CMP composition.  
   
   
       98 . The method of  claim 91 , wherein the pH of the composition is 3.5.