Methods and Apparatus for Monitoring Deposition Quality During Conformable Contact Mask Plating Operations

Abstract

Electrochemical fabrication (e.g. EFAB) processes and apparatus are disclosed that provide monitoring of at least one electrical parameter (e.g. voltage) during selective deposition where the monitored parameter is used to help determine the quality of the deposition that was made. If the monitored parameter indicates that a problem occurred with the deposition, various remedial operations may be undertaken to allow successful formation of the structure to be completed.

1 . An electrochemical fabrication process for producing a three-dimensional structure, the process comprising: 
 (A) selectively depositing at least at least one of a first structural material or a first sacrificial material to form a portion of a first layer on a substrate, wherein the substrate may comprise previously deposited material;    (B) depositing the other of the first structural material or the first sacrificial material to form another portion of the first layer;    (C) forming a plurality of layers, each comprising at least one sacrificial material, which may or may not be different from the first sacrificial material, and at least one structural material, which may or may not be different from the first structural material, such that successive layers are formed adjacent to and adhered to previously formed layers, wherein said forming comprises repeating (A) and (B) a plurality of times;    wherein monitoring of an electrical parameter during deposition, manual visual inspection of deposited material, or automatic visual inspection of deposited material occurs to detect if a problem occurred; and    wherein at least one of the first or plurality of layers is at least partially removed after at least partial formation of the at least one layer and then the at least one layer is reformed if the problem is detected.    
   
   
       2 . The method of  claim 1 , wherein at least a plurality of the selective depositing operations comprise: 
 (1) locating a mask on, or in proximity to, the substrate or previously formed layer;    (2) in presence of a plating solution, conducting an electric current between an anode and the substrate through the at least one opening in the mask, such that a selected deposition material is deposited onto the substrate to form at least a portion of a layer; and    (3) removing the mask from the substrate.    
   
   
       3 . The process of  claim 1  additionally comprising: 
 (C) supplying a plurality of preformed masks, wherein each mask comprises a patterned dielectric material that includes at least one opening through which the selective depositing occurs during formation of a given layer, wherein each mask comprises a support structure that supports the patterned dielectric material; and    wherein the locating of a mask on, or in proximity to, a substrate comprises contacting the substrate and the dielectric material of a selected preformed mask prior to the depositing occurring during formation of the given layer.    
   
   
       4 . The process of  claim 1  wherein the locating of a mask on, or in proximity to, a substrate or previously formed layer comprises forming and adhering a patterned mask to the substrate or previously formed layer.  
   
   
       5 . The process of  claim 1  wherein the monitoring comprises monitoring an electrical parameter during deposition.  
   
   
       6 . The process of  claim 5  wherein the electrical parameter comprises a plating voltage measured during the selective depositing.  
   
   
       7 . The process of  claim 1  wherein the monitoring comprises a visual inspection of deposited material.  
   
   
       8 . The process of  claim 6  wherein the voltage comprises a voltage profile measured over time.  
   
   
       9 . The process of  claim 5  wherein a comparison of the measured voltage profile is made to an anticipated voltage profile.  
   
   
       10 . The process of  claim 1  wherein the problem is detected during a deposition operation and the deposition operation is aborted prematurally.  
   
   
       11 . The process of  claim 1  wherein the problem is detected after which an additional deposition is allowed to occur and thereafter the at least partial removal is allowed to occur.  
   
   
       12 . The process of  claim 1  wherein the problem is detected during or after formation of a given layer and thereafter, not only is the given layer removed but one or more previously formed layers are also removed and each of the removed layers is reformed.