US2007181256A1PendingUtilityA1

Plasma processing unit

22
Assignee: SUGATA MASARUPriority: Jul 20, 2004Filed: Jun 10, 2005Published: Aug 9, 2007
Est. expiryJul 20, 2024(expired)· nominal 20-yr term from priority
Inventors:Masaru SugataAkira ItaniAkihito IsobeKenichi Shomura
H10P 50/242H01J 37/32724C23C 16/5096H01J 37/32009
22
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Claims

Abstract

A plasma processing unit includes: a processing chamber ( 10 ); a first electrode ( 5 ) and a second electrode ( 11 ) which are placed in the processing chamber ( 10 ) and arranged to face each other; and a quartz plate ( 13 ) arranged on one of the surfaces of the first electrode ( 5 ) facing the second electrode ( 11 ) to protect the first electrode ( 5 ), the plasma processing unit being configured to excite reaction gas in the processing chamber ( 11 ) to generate plasma between the first electrode ( 5 ) and the second electrode ( 11 ) so that a target object placed on one of the surfaces of the second electrode ( 11 ) facing the first electrode ( 5 ) is subjected to plasma processing, wherein one of the surfaces of the quartz plate ( 13 ) facing the second electrode ( 11 ) is rough-finished.

Claims

exact text as granted — not AI-modified
1 . A plasma processing unit comprising: 
 a processing chamber;    a first electrode and a second electrode which are placed in the processing chamber and arranged to face each other; and    a protection plate arranged on one of the surfaces of the first electrode facing the second electrode to protect the first electrode,    the plasma processing unit being configured to excite reaction gas in the processing chamber to generate plasma between the first and second electrodes so that a target object placed on one of the surfaces of the second electrode facing the first electrode is subjected to plasma processing, wherein    one of the surfaces of the protection plate facing the second electrode is rough-finished.    
   
   
       2 . The plasma processing unit of  claim 1 , wherein 
 the protection plate is made of quartz or ceramic.    
   
   
       3 . The plasma processing unit of  claim 1 , wherein 
 the first electrode includes a top electrode made of conductive material and a dielectric substance provided between the top electrode and the protection plate.    
   
   
       4 . The plasma processing unit of  claim 1 , wherein 
 the one of the surfaces of the protection plate facing the second electrode is blast-finished.    
   
   
       5 . The plasma processing unit of  claim 1 , wherein 
 the plasma processing is dry etching.

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