Single wafer backside wet clean

Abstract

A method and apparatus for cleaning a backside of a substrate is disclosed. The method includes placing the substrate parallel to a platter, wherein the backside of the substrate is facing a top side of the platter in a spaced apart relation, thus defining a gap therebetween. Subsequently, a liquid is flowed through the platter and into continuous contact with the entire backside of the substrate and the top side of the platter.

1 . A method for cleaning a backside of a substrate, comprising: 
 placing a substrate parallel to a platter, wherein a backside of the substrate is facing a top side of the platter in a spaced apart relation, thus defining a gap therebetween; and    flowing a liquid through the platter and into continuous contact with the top side of the platter and the entire backside of the substrate.    
   
   
       2 . The method of  claim 1 , further comprising: 
 holding the substrate in a bracket above the platter; and    rotating the bracket while simultaneously performing the flowing step.    
   
   
       3 . The method of  claim 1 , wherein the placing step further comprises placing the substrate parallel to the platter in a horizontal orientation.  
   
   
       4 . The method of  claim 1 , wherein the substrate comprises a hydrophobic semiconductor wafer.  
   
   
       5 . The method of  claim 1 , wherein the platter comprises a porous material.  
   
   
       6 . The method of  claim 1  further comprising setting a distance across the gap in response to a viscosity of the liquid.  
   
   
       7 . The method of  claim 1 , wherein a distance across the gap defined between the backside of the substrate and the top side of the platter is approximately 3.0 to 4.0 millimeters.  
   
   
       8 . The method of  claim 1 , wherein the liquid comprises at least one of isopropyl alcohol, hydrogen peroxide, ammonium hydroxide, water or de-ionized water.  
   
   
       9 . A method for cleaning a backside of a substrate, comprising: 
 placing a substrate parallel to a platter having a top side and a bottom side, wherein a backside of the substrate is spaced apart from the top side of the platter, thereby forming a gap between the backside of the substrate and the top side of the platter; and    filling the gap with a cleaning liquid provided through the platter.    
   
   
       10 . The method of  claim 9 , further comprising: 
 rotating the substrate while the cleaning liquid is in the gap.    
   
   
       11 . The method of  claim 9 , wherein the placing step further comprises placing the substrate in a horizontal orientation above the platter.  
   
   
       12 . The method of  claim 9 , wherein the substrate comprises a hydrophobic semiconductor wafer.  
   
   
       13 . The method of  claim 9 , wherein the platter comprises a porous material.  
   
   
       14 . The method of  claim 9  further comprising setting a distance across the gap in response to a viscosity of the cleaning liquid.  
   
   
       15 . The method of  claim 9 , wherein a distance across the gap between the backside of the substrate and the top side of the platter is approximately 3.0 to 4.0 millimeters.  
   
   
       16 . The method of  claim 9 , wherein the cleaning liquid comprises at least one of isopropyl alcohol, hydrogen peroxide, ammonium hydroxide, water or de-ionized water.  
   
   
       17 . A method for cleaning a backside of a substrate, comprising: 
 placing a substrate parallel to a platter having a top side and a bottom side, wherein the backside of the substrate is facing the top side of the platter in a horizontal orientation;    spacing the backside of the substrate approximately 3.0 to 4.0 millimeters from the top side of the platter; and    flowing a cleaning liquid through the platter into continuous contact with the entire backside of the substrate and the top side of the platter.    
   
   
       18 . The method of  claim 17 , further comprising: 
 rotating the substrate while flowing the cleaning liquid into contact with the substrate.    
   
   
       19 . The method of  claim 18 , further comprising: 
 stopping the flow of cleaning liquid.    
   
   
       20 . The method of  claim 19 , further comprising: 
 increasing a rotating speed of the substrate after stopping the flow of cleaning liquid.    
   
   
       21 . The method of  claim 20 , further comprising: 
 increasing the spacing between the substrate and the top side of the platter after stopping the flow of cleaning liquid.