Epitaxial thin films

Abstract

Epitaxial thin films are formed on textured substrates. An electrode is formed on the exposed surface of the thin film; the textured substrate removed, and second electrode is formed on the thin film on the side opposite the first electrode. A capacitor is thereby formed.

1 . A method of making a high permittivity dielectric layer between a pair of opposing electrodes comprising the steps of: 
 forming, as said high permittivity dielectric layer, an epitaxial thin film on a textured substrate;    forming one of said electrodes on an exposed surface of said thin film;    wholly or partially removing said textured substrate; and    forming an electrical connection to access said high permittivity dielectric layer on the side of said textured substrate.    
   
   
       2 . The method of  claim 1 , wherein at least one of said electrodes is formed by being directly deposited on the surface of said thin film.  
   
   
       3 . The method of  claim 1 , wherein an insulator is formed onto parts of the side of the textured substrate.  
   
   
       4 . The method of  claim 1 , further comprising the step of forming the dielectric layer as part of a discrete capacitor.  
   
   
       5 . The method of  claim 1  further comprising forming the dielectric layer as part of a tunable filter.  
   
   
       6 . The method of  claim 1  further comprising forming the dielectric layer as part of a phase shifter.  
   
   
       7 . A method of making a dielectric layer between a pair of opposing electrodes comprising the steps of: 
 forming, as said dielectric layer, an epitaxial cerate or zirconate thin film on a textured substrate;    forming one of said electrodes on an exposed surface of said cerate or zirconate thin film;    wholly or partially removing said textured substrate; and    forming an electrical connection to access said dielectric layer on the side of said textured    substrate.    
   
   
       8 . The method of  claim 7  wherein said dielectric can transmit oxygen.  
   
   
       9 . The method of  claim 7 , wherein at least one of said electrodes is formed by being directly deposited on the surface of said thin film.  
   
   
       10 . The method of  claim 7 , wherein an insulator is formed onto parts of the side of the textured substrate.  
   
   
       11 . The method of  claim 7 , further comprising the step of forming the dielectric layer as part of a discrete capacitor.  
   
   
       12 . The method of  claim 7  further comprising forming the dielectric layer as part of a tunable filter.  
   
   
       13 . The method of  claim 7  further comprising forming the dielectric layer as part of a phase shifter.  
   
   
       14 . A method of making a conductive oxide dielectric layer between a pair of opposing electrodes comprising the steps of: 
 forming, as said conductive oxide dielectric layer, an epitaxial thin film on a textured substrate;    forming one of said electrodes on an exposed surface of said thin film;    wholly or partially removing said textured substrate; and    forming an electrical connection to access said conductive oxide dielectric layer on the side of said textured substrate.    
   
   
       15 . The method of  claim 14 , wherein at least one of said electrodes is formed by being directly deposited on the surface of said thin film.  
   
   
       16 . The method of  claim 14 , wherein at least one electrode is a cermet.  
   
   
       17 . The method of  claim 14 , wherein an insulator is formed onto parts of the side of the textured substrate.  
   
   
       18 . The method of  claim 14 , further comprising the step of forming the dielectric layer as part of a discrete capacitor.  
   
   
       19 . The method of  claim 14  further comprising forming the dielectric layer as part of a tunable filter.  
   
   
       20 . The method of  claim 14  further comprising forming the dielectric layer as part of a phase shifter.