Semiconductor device

Abstract

A problem of an increased manufacturing cost is caused in conventional semiconductor devices. A semiconductor device 1 includes: a lower electrode 102 provided on a semiconductor substrate 101; an insulating film 105, provided on the lower electrode 102 so as to be in contact with the lower electrode 102; an upper electrode 103, provided on the insulating film 105 so as to be in contact with the insulating film 105; an opening portion 121, provided in the lower electrode 102 and extending through the lower electrode 102; and an opening portion 122, provided in the upper electrode 103 and extending through the upper electrode 103. The insulating film 123 is embedded in the opening portion 121 that is provided in the lower electrode 102. Similarly, the insulating film 124 is embedded in the opening portion 122 that is provided in the upper electrode 103.

1 . A semiconductor device, comprising:
 a first electrode provided on a semiconductor substrate;   a capacitive film, provided on said first electrode so as to be in contact with the first electrode;   a second electrode, provided on said capacitive film so as to be in contact with the capacitive film, said second electrode, said first electrode and said capacitive film constituting a capacitor element;   a first opening portion, provided in said first electrode and extending through the first electrode; and   a second opening portion, provided in said second electrode and extending through the second electrode,   wherein an insulating film is embedded within said first opening portion and said second opening portion.   
   
   
       2 . The semiconductor device according to  claim 1 , wherein a width of said first opening portion and a width said second opening portion are equal to or shorter than a thickness of said first electrode and a thickness of second said electrode, respectively. 
   
   
       3 . The semiconductor device according to  claim 1 , wherein each of said first electrode and said second electrode is composed of a metallic film and a diffusion barrier film covering a surface of the metallic film. 
   
   
       4 . The semiconductor device according to  claim 1 , further comprising:
 a second capacitive film, provided on said second electrode so as to be in contact with the second electrode;   a third electrode, provided on said second capacitive film so as to be in contact with said second capacitive film, said third electrode, said second electrode and said second capacitive film constituting a capacitor element; and   a third opening portion, provided in said third electrode and extending through the third electrode,   wherein an insulating film is embedded within said third opening portion.   
   
   
       5 . The semiconductor device according to  claim 1 , wherein an orthogonal projection of said first opening portion to a plane that is parallel to a substrate surface of said semiconductor substrate is identical with an orthogonal projection of said second opening portion to said plane. 
   
   
       6 . The semiconductor device according to  claim 1 , wherein said first opening portion and said second opening portion are slit-shaped in plan view. 
   
   
       7 . The semiconductor device according to  claim 1 , wherein said first opening portion and said second opening portion are annular-shaped in plan view. 
   
   
       8 . The semiconductor device according to  claim 1 , wherein a plurality of said first opening portions and a plurality of said second opening portions are provided, and are arranged to form a lattice pattern in plan view. 
   
   
       9 . The semiconductor device according to  claim 1 , wherein said first electrode and said second electrode are ladder-shaped in plan view.