Semiconductor device structure that includes markings covered by visibly opaque materials

Abstract

Semiconductor device structures include markings that are covered by visibly opaque materials. The markings include alpha-numeric characters and are recessed within the surface of a fabrication substrate. Each character may include a series of circular holes in the substrate. The recessed characters may be filled with a material that does not cover a surface of the fabrication substrate.

1 . A semiconductor device structure, comprising: 
 a fabrication substrate;    at least one identification mark including a plurality of elements indicative of a type of semiconductor device fabricated on the fabrication substrate carried by the fabrication substrate, each element of the plurality of elements comprising an alpha-numeric character including at least one recess formed in the fabrication substrate; and    at least one layer comprising material opaque to at least visible wavelengths of electromagnetic radiation covering the at least one mark.    
   
   
       2 . The semiconductor device structure of  claim 1 , wherein the at least one identification mark conveys information about a process flow to which the semiconductor device structure is to be subjected.  
   
   
       3 . The semiconductor device structure of  claim 2 , wherein the at least one identification mark conveys information about process equipment to which the semiconductor device structure is to be transported.  
   
   
       4 . The semiconductor device structure of  claim 1 , wherein each element of the plurality of elements of the identification mark includes a series of circular recesses.  
   
   
       5 . The semiconductor device structure of  claim 4 , wherein each circular recess of the plurality of circular recesses has a depth of about 1,000 Å.  
   
   
       6 . The semiconductor device structure of  claim 1 , wherein the at least one layer comprises polyimide, polysilicon, metal, a metal silicide, a metal oxide, a silicon nitride a metal nitride, or a resist.  
   
   
       7 . The semiconductor device structure of  claim 1 , wherein the at least one identification mark is located adjacent to a peripheral edge of the fabrication substrate.  
   
   
       8 . The semiconductor device structure of  claim 7 , wherein a location of the at least one identification mark is at an opposite peripheral edge of the fabrication substrate from an edge in which an alignment notch is formed.  
   
   
       9 . The semiconductor device structure of  claim 1  further comprising another material filling each recess.  
   
   
       10 . The semiconductor device structure of  claim 9 , wherein the another material fills each recess without covering a surface of the fabrication substrate.  
   
   
       11 . The semiconductor device structure of  claim 10 , wherein the another material comprises silicon dioxide.  
   
   
       12 . The semiconductor device structure of  claim 11 , wherein the silicon dioxide has a thickness of about 1,000 Å or less.  
   
   
       13 . The semiconductor device structure of  claim 12 , wherein the silicon dioxide has a thickness of about 90 Å.  
   
   
       14 . The semiconductor device structure of  claim 11 , wherein the at least one layer comprises tungsten silicide.  
   
   
       15 . The semiconductor device structure of  claim 14 , wherein the at least one layer has a thickness of about 1,250 Å.  
   
   
       16 . The semiconductor device structure of  claim 1 , wherein the at least one layer comprises polysilicon.  
   
   
       17 . The semiconductor device structure of  claim 16 , wherein the at least one layer has a thickness of about 850 Å to about 4,000 Å.  
   
   
       18 . The semiconductor device structure of  claim 17 , further comprising: 
 a layer comprising tungsten silicide over the at least one layer.    
   
   
       19 . The semiconductor device structure of  claim 18 , wherein the layer comprising tungsten silicide has a thickness of about 1,250 Å.  
   
   
       20 . The semiconductor device structure of  claim 10 , wherein the another material is similar in color to a material of the fabrication substrate.