Energetic thin-film initiator

Abstract

An energetic thin film initiator and a method of making same comprising providing a plurality of thin film layers of fuel, providing a plurality of thin film layers of oxidizer, at least one interposed between two of the thin layers of fuel, and providing an electrical input to the thin film layers that upon receipt of an electrical pulse causes ignition of layers of fuel and oxidizer.

1 . An energetic thin film initiator comprising: 
 a plurality of thin film layers of fuel;    a plurality of thin film layers of oxidizer, at least one interposed between two of said thin layers of fuel; and    an electrical input to the thin film layers that upon receipt of an electrical pulse causes ignition of layers of fuel and oxidizer.    
   
   
       2 . The initiator of  claim 1  wherein said electrical input comprises a pair of conductive electrical leads.  
   
   
       3 . The initiator of  claim 1  additionally comprising a silicon wafer substrate for said thin film layers.  
   
   
       4 . The initiator of  claim 1  wherein an electrical pulse of less than or equal to approximately 2 watts causes ignition.  
   
   
       5 . The initiator of  claim 1  wherein a resultant temperature of said ignition is at least approximately 4600 degrees F.  
   
   
       6 . The initiator of  claim 1  wherein said thin film layers are tailored for one or more properties selected from the group consisting of stored chemical energy content, maximum achievable reaction temperature, maximum reaction rate, deposition thickness, and required deposition area.  
   
   
       7 . The initiator of  claim 1  wherein said thin film layers have a thickness of less than approximately 100 micrometers.  
   
   
       8 . The initiator of  claim 7  wherein said thin film layers have a thickness of less than approximately 100 nanometers.  
   
   
       9 . The initiator of  claim 1  wherein said ignition primarily results from free energy release associated with intermetallic reactions.  
   
   
       10 . The initiator of  claim 1  wherein said ignition primarily results from free energy release associated with oxidation-reduction reactions.  
   
   
       11 . A method of making an energetic thin film initiator, the method comprising: 
 providing a plurality of thin film layers of fuel;    providing a plurality of thin film layers of oxidizer, at least one interposed between two of the thin layers of fuel; and    providing an electrical input to the thin film layers that upon receipt of an electrical pulse causes ignition of layers of fuel and oxidizer.    
   
   
       12 . The method of  claim 11  wherein the electrical input comprises a pair of conductive electrical leads.  
   
   
       13 . The method of  claim 11  additionally comprising the step of providing a silicon wafer substrate for the thin film layers.  
   
   
       14 . The method of  claim 11  wherein an electrical pulse of less than or equal to approximately 2 watts causes ignition.  
   
   
       15 . The method of  claim 11  wherein a resultant temperature of the ignition is at least approximately 4600 degrees F.  
   
   
       16 . The method of  claim 11  additionally comprising the step of tailoring the thin film layers for one or more properties selected from the group consisting of stored chemical energy content, maximum achievable reaction temperature, maximum reaction rate, deposition thickness, and required deposition area.  
   
   
       17 . The method of  claim 11  wherein the thin film layers have a thickness of less than approximately 100 micrometers.  
   
   
       18 . The method of  claim 17  wherein the thin film layers have a thickness of less than approximately 100 nanometers.  
   
   
       19 . The method of  claim 11  wherein the ignition primarily results from free energy release associated with intermetallic reactions.  
   
   
       20 . The method of  claim 11  wherein the ignition primarily results from free energy release associated with oxidation-reduction reactions.