Decreasing thermal contact resistance at a material interface

Abstract

A heat sink assembly in which the interface material is chemically bonded to both the heat source material and the heat sink material. The chemical bonding can lower the contact resistance that would otherwise exist using conventional adhesives to attach the heat sink to the heat source. The chemical bonding achieved between the respective materials can be, for example, ionic, covalent or metallic bonds, depending on the characteristic of the materials used to make the heat source, the interface material, and the heat sink.

1 . A method comprising: 
 preparing a surface of a heat source for chemical bonding;    preparing a surface of a heat sink for chemical bonding;    attaching the surface of the heat source to a first surface of an interface material, the interface material comprising a binder material having silicone therein, the interface material further comprising a filler material, wherein the filler material includes at least one component selected from the group comprising boron, indium, silver, copper or carbon; and    attaching the surface of the heat sink to a second surface of the interface material, wherein chemical bonds are formed between components of the heat source and the interface material and between components of the heat sink and the interface material.    
   
   
       2 . The method of  claim 1  wherein the chemical bonds formed between components of the heat source and the interface material are selected from the group consisting of ionic bonds, covalent bonds, metallic bonds, and electrostatic bonds.  
   
   
       3 . The method of  claim 1  wherein the chemical bonds formed between components of the heat sink and the interface material are selected from the group consisting of ionic bonds, covalent bonds, metallic bonds, and electrostatic bonds.  
   
   
       4 . The method of  claim 1  wherein the heat source is a semiconductor integrated circuit.  
   
   
       5 . An apparatus comprising: 
 a heat source having a first surface;    a heat sink having a second surface;    an interface material attached to the first and second surfaces, wherein chemical bonds are formed between components of the heat source and the interface material and between components of the heat sink and the interface material, wherein the interface material comprises a binder material having silicone therein, and wherein the interface material further comprises a filler material, the filler material having therein at least one component selected from the group comprising boron, indium, silver, copper or carbon.    
   
   
       6 . The apparatus of  claim 5  wherein the chemical bonds formed between components of the heat source and the interface material are selected from the group consisting of ionic bonds, covalent bonds, metallic bonds, and electrostatic bonds.  
   
   
       7 . The apparatus of  claim 5  wherein the chemical bonds formed between components of the heat sink and the interface material are selected from the group consisting of ionic bonds, covalent bonds, metallic bonds, and electrostatic bonds.  
   
   
       8 . The apparatus of  claim 5  wherein the heat source is a semiconductor integrated circuit.  
   
   
       9 . An apparatus comprising: 
 a heat source having a first surface;    a heat sink having a second surface;    an interface material attached to the first and second surfaces;    means for creating chemical bonds between components of the heat source and the interface material; and    means for creating chemical bonds between components of the heat sink and the interface material.    
   
   
       10 . The apparatus of  claim 9  wherein the interface material comprises a binder material and a filler material.  
   
   
       11 . The apparatus of  claim 10  wherein the binder material contains silicone, and wherein the filler material includes at least one component selected from the group comprising boron, indium, silver, copper or carbon.  
   
   
       12 . The apparatus of  claim 9  wherein the means for creating chemical bonds between components of the heat source and the interface material comprises means for attaching the first surface of the heat source to the first surface of the interface material, the interface material comprising a binder material having silicone therein, the interface material further comprising a filler material, wherein the filler material includes at least one component selected from the group comprising boron, indium, silver, copper or carbon, wherein chemical bonds are formed between components of the heat source and the interface material.  
   
   
       13 . The apparatus of  claim 9  wherein the means for creating chemical bonds between components of the heat sink and the interface material comprises means for attaching the second surface of the heat sink to the second surface of the interface material, the interface material comprising a binder material having silicone therein, the interface material further comprising a filler material, wherein the filler material includes at least one component selected from the group comprising boron, indium, silver, copper or carbon, wherein chemical bonds are formed between components of the heat sink and the interface material.  
   
   
       14 . The apparatus of  claim 9  wherein the heat source is a semiconductor integrated circuit.  
   
   
       15 . The apparatus of  claim 12  wherein the heat source is a semiconductor integrated circuit.