Semiconductor thin film forming system

Abstract

In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20′) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm −2 and can provide a silicon-insulating film interface exhibiting a low interface state density.

1 - 4 . (canceled)  
   
   
       5 . A semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected exposure beam patterned through a pattern formed on a photo mask, 
 said system comprising an alignment mechanism for aligning the patterned exposure beam with reference to a mark formed on a substrate, on which said semiconductor thin film is deposited.    
   
   
       6 - 16 . (canceled)  
   
   
       17 . The system according to  claim 5 , wherein said projected beam comprises a laser beam.  
   
   
       18 . The system according to  claim 17 , wherein said laser beam is generated by an excimer laser.  
   
   
       19 . The system according to  claim 17 , wherein said projected beam is uniformized using a homogenizer, a mask and a projection lens through which said light is applied.  
   
   
       20 . The system according to  claim 19 , wherein said mask includes a slit for throttling light passed through the homogenizer into a rectangular beam.  
   
   
       21 . A system according to  claim 19 , wherein a projection lens is used for reducing and projecting a slit image of the mask onto said semiconductor thin film.  
   
   
       22 . A system according to  claim 5 , wherein said predetermined region of the semiconductor thin film is modified by exposing, at a travel pitch of the order of micrometers, the semiconductor thin film to said projected light.  
   
   
       23 . A system according to  claim 5 , wherein said predetermined region of the semiconductor thin film is modified by exposing a target exposure position of the semiconductor thin film to said projected light with a target accuracy of 0.1 μm to 100 μm.