Semiconductor device and method of manufacturing the same

Abstract

There is included an inorganic insulating film having a porous structure including a cylindrical vacancy oriented in parallel with the surface of a substrate subjected to a hydrophilic treatment or a hydrophobic treatment.

1 - 10 . (canceled)  
   
   
       11 . A semiconductor device comprising: 
 a substrate, the surface of the substrate being subjected to a hydrophilic treatment or a hydrophobic treatment;    an inorganic insulating film having a porous area defined by substantially all cylindrical vacancies,    wherein the cylindrical vacancies in the porous area are constrained to be oriented substantially in parallel with the surface of the substrate solely in areas of the substrate surface subjected to the hydrophilic treatment or the hydrophobic treatment, and wherein substantially all the vacancies are arranged at periodic intervals.    
   
   
       12 . The semiconductor according to  claim 11 , wherein the inorganic insulating film comprises a plurality of the porous areas, 
 wherein the cylindrical vacancies are formed such that the cylindrical vacancies of adjacent porous areas are oriented in different directions.    
   
   
       13 . The semiconductor device according to  claim 11 , wherein the inorganic insulating film is an interlayer insulating film provided between a semiconductor substrate or a lower wiring conductor formed on the semiconductor substrate and an upper wiring conductor.  
   
   
       14 . The semiconductor device according to  claim 11 , wherein a part of the substrate is selectively subjected to the hydrophilic treatment or the hydrophobic treatment and there are regions on the same substrate surface in which the cylindrical vacancy has different diameters.  
   
   
       15 . The semiconductor device according to  claim 11 , wherein substantially all the cylindrical vacancies in the porous area are oriented such that they are substantially parallel to one another.