Semiconductor device

Abstract

On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a fuse region provided with a plurality of fuses is provided. The reflector layer of copper has a plane of reflection recessed downward to reflect a laser beam. The reflector layer of copper is arranged to overlap substantially the entirety of the fuse region, as seen in a plane. A laser beam radiated to blow the fuse can have a reduced effect on a vicinity of the fuse region. A semiconductor device reduced in size can be obtained.

1 - 12 . (canceled)  
   
   
       13 . A semiconductor device, comprising: 
 a semiconductor substrate having a main surface;    a plurality of fuses formed in a predetermined conductive layer over said main surface of said semiconductor substrate; and    a blocking layer disposed between said predetermined conductive layer and said main surface of said semiconductor substrate,    wherein said blocking layer has a reflection plane which reflects the laser beam in the direction that the reflected laser beam recedes from said main surface,    wherein a recess as said reflection plane is arranged to overlay said plurality of fuses, as seen in a plane, and    wherein said reflection plane dishes in the direction of said main surface from said plurality of fuses.    
   
   
       14 . The semiconductor device according to  claim 13 , wherein the absorptance of the laser beam in said blocking layer is smaller than that of the laser beam in said fuse.  
   
   
       15 . The semiconductor device according to  claim 13 , wherein said blocking layer is formed of a material contain copper.  
   
   
       16 . The semiconductor device according to  claim 13 , further comprising an insulating layer between said main surface and said blocking layer.  
   
   
       17 . The semiconductor device according to  claim 13 , wherein said blocking layer has a thickness attenuating equal or more than 99% of the laser beam incident thereon.  
   
   
       18 . The semiconductor device according to  claim 13 , further comprising a metal wiring connected to said fuse in said predetermined conductive layer, 
 wherein as seen in a plane, the area of said reflection plane is larger than the area of said metal wiring.    
   
   
       19 . A semiconductor device, comprising: 
 a semiconductor substrate having a main surface;    a plurality of fuses formed in a conductive layer over said main surface of said semiconductor substrate; and    a blocking layer disposed between said conductive layer and said main surface of said semiconductor substrate,    wherein said blocking layer has a reflection plane which reflects the laser beam, wherein a recess as said reflection plane is arranged to overlay said plurality of fuses, as seen in a plane, and    wherein said reflection plane dishes in the direction of said main surface from said plurality of fuses,    wherein said blocking layer has a barrier metal and a copper metal on said barrier metal,    wherein there is said reflection plane on the surface of said copper metal.    
   
   
       20 . The semiconductor device according to  claim 19 , further comprising a metal wiring connected to said fuse in said predetermined conductive layer, 
 wherein as seen in a plane, the area of said reflection plane is larger than the area of said metal wiring.    
   
   
       21 . The semiconductor device according to  claim 20 , wherein the area of said reflection plane dishes deeper than the area of said metal wiring.  
   
   
       22 . The semiconductor device according to  claim 19 , wherein the absorptance of the laser beam in said blocking layer is smaller than that of the laser beam in said fuse.  
   
   
       23 . The semiconductor device according to  claim 19 , further comprising an insulating layer between said main surface and said blocking layer.  
   
   
       24 . The semiconductor device according to  claim 19 , wherein said blocking layer has a thickness attenuating equal or more than 99% of the laser beam incident thereon.