Planarization with reduced dishing

Abstract

A method of forming a planarized layer on a substrate, where the substrate is cleaned, and the layer is formed having a surface with high portions and low portions. A resistive mask is formed over the low portions of the layer, but not over the high portions of the layer. The surface of the layer is etched, where the high portions of the layer are exposed to the etch, but the low portions of the layer underlying the resistive mask are not exposed to the etch. The etch of the surface of the layer is continued until the high portions of the layer are at substantially the same level as the low portions of the layer, thereby providing an initial planarization of the surface of the layer. The resistive mask is removed from the surface of the layer, and all of the surface of the layer is planarized to provide a planarized layer.

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         17 . A method of forming a planarized layer on a substrate, the method comprising the steps of: 
 cleaning the substrate,    forming the layer having a surface with high portions and low portions,    forming a planar layer over the layer,    planarizing the planar layer down to the high portions of the surface of the layer, and    planarizing the planar layer and the surface of the layer using a process that planarizes both the planar layer and the layer at a substantially equal rate, until at least the planar layer is substantially completely removed, to provide a planarized layer.    
     
     
         18 . The method of  claim 17 , wherein the step of forming the planar layer comprises depositing at least one of spin on glass and flow fill dielectric.  
     
     
         19 . The method of  claim 17 , wherein the step of planarizing the planar layer comprises chemical mechanical polishing the planar layer.  
     
     
         20 . The method of  claim 17 , wherein the step of planarizing the planar layer and the surface of the layer comprises at least one of chemical mechanical polishing and electropolishing.