Nanoscopic wired-based devices and arrays

Abstract

Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.

1 . A method for growing one or more nanoscopic wires on a substrate comprising: 
 providing a substrate;    patterning two or more electrodes on a surface of the substrate; and    growing the one or more nanoscopic wires in the presence of an electric field applied between the two or more electrodes, thereby causing the one or more nanoscopic wires to grow between the two or more electrodes.    
     
     
         2 . The method of  claim 1 , wherein the one or more nanoscopic wires is a carbon nanotube.  
     
     
         3 . The method of  claim 1 , wherein the act of growing a nanoscopic wire comprises providing a catalytic site on the surface of the substrate, and directing growth of the nanoscopic wire from the catalytic site.  
     
     
         4 . The method of  claim 3 , wherein the catalytic site is a catalytic colloid site.  
     
     
         5 . The method of  claim 3 , wherein the catalytic site is patterned on the surface by lithography.  
     
     
         6 . The method of  claim 1 , wherein the one or more nanoscopic wires comprises a semiconductor nanowire.  
     
     
         7 . The method of  claim 6 , wherein the one or more semiconductor nanowires comprises one or more semiconductor nanowires selected from the group comprising of Group II-VI, Group III-V, or Group IV semiconductors.  
     
     
         8 . The method of  claim 7 , wherein the one or more semiconductor nanowires comprises one or more silicon nanowires.  
     
     
         9 . A method comprising: 
 growing a nanoscopic wire in the presence of an electric field of intensity sufficient to orient the growth of the wire.    
     
     
         10 . A method as in  claim 9 , comprising growing the nanoscopic wire via CVD.  
     
     
         11 . A method as in  claim 9 , comprising providing a catalytic site, creating the electric field oriented in a predetermined direction relative to the catalytic site, and growing the nanoscopic wire catalytically from the site in the predetermined direction.  
     
     
         12 . A method for aligning one or more nanoscopic wires on a substrate comprising: 
 providing a substrate;    patterning two or more electrodes on a surface of the substrate;    providing the one or more nanoscopic wires; and    providing an electric field between the two or more electrodes, thereby causing the one or more nanoscopic wires to align between the two or more electrodes.    
     
     
         13 . The method of  claim 12 , wherein the nanoscopic wires is a carbon nanotube.  
     
     
         14 . The method of  claim 12 , wherein the act of providing a nanoscopic wire comprises providing a catalytic site on the surface of the substrate, and directing growth of the nanoscopic wire from the catalytic site.  
     
     
         15 . The method of  claim 14 , wherein the catalytic site is a catalytic colloid site.  
     
     
         16 . The method of  claim 14 , wherein the catalytic site is patterned on the surface by lithography.  
     
     
         17 . The method of  claim 12 , wherein the one or more nanoscopic wires comprises a semiconductor nanowire.  
     
     
         18 . The method of  claim 17 , wherein the one or more semiconductor nanowires comprises one or more semiconductor nanowires selected from the group comprising Group II-VI, Group III-V, or Group IV semiconductors.  
     
     
         19 . The method of  claim 18 , wherein the one or more semiconductor nanowires comprises one or more silicon nanowires.