Semiconductor device, manufacturing method of semiconductor device, and RFID tag

Abstract

The present invention provides a semiconductor device which is formed at low cost and has a great versatility, a manufacturing method thereof, and further a semiconductor device with an improved yield, and a manufacturing method thereof. A structure, which has a base including a plurality of depressions having different shapes or sizes, and a plurality of IC chips which are disposed in the depressions and which fit the depressions, is formed. A semiconductor device which selectively includes a function in accordance with an application, by using the base including the plurality of depressions and the IC chips which fit the depressions, can be manufactured at low cost.

1 . A semiconductor device comprising:
 a base including a plurality of depressions having different shapes or sizes; and   a plurality of IC chips which are disposed in the depressions and which fit the depressions.   
     
     
         2 . A semiconductor device comprising:
 a base including a plurality of depressions having different shapes or sizes;   a plurality of IC chips which are disposed in the depressions and which fit the depressions;   a film covering the base and the IC chips; and   a wiring formed over the film and electrically connected to at least one IC chip selected from the plurality of the IC chips.   
     
     
         3 . The semiconductor device according to  claim 2 ,
 wherein the wiring is formed by a droplet discharging method or a screen printing method.   
     
     
         4 . The semiconductor device according to  claim 1 ,
 wherein the base comprises a resin.   
     
     
         5 . The semiconductor device according to  claim 2 ,
 wherein the base comprises a resin.   
     
     
         6 . The semiconductor device according to  claim 1 ,
 wherein a part of the plurality of depressions comprises a protruding portion.   
     
     
         7 . The semiconductor device according to  claim 2 ,
 wherein a part of the plurality of depressions comprises a protruding portion.   
     
     
         8 . The semiconductor device according to  claim 1 ,
 wherein the IC chip is formed by using a silicon substrate, a gallium arsenide substrate, a silicon germanium substrate, an SOI substrate, a quartz substrate, or a glass substrate.   
     
     
         9 . The semiconductor device according to  claim 2 ,
 wherein the IC chip is formed by using a silicon substrate, a gallium arsenide substrate, a silicon germanium substrate, an SOI substrate, a quartz substrate, or a glass substrate.   
     
     
         10 . The semiconductor device according to  claim 1 , further comprising an antenna electrically connected to the IC chip. 
     
     
         11 . The semiconductor device according to  claim 2 , further comprising an antenna electrically connected to the wiring. 
     
     
         12 . The semiconductor device according to  claim 10 , wherein the semiconductor device is an RFID tag. 
     
     
         13 . The semiconductor device according to  claim 11 , wherein the semiconductor device is an RFID tag. 
     
     
         14 . A semiconductor device comprising:
 a base including a first depression and a second depression which have different shapes or different sizes;   a first IC chip which is disposed in the first depression and which fits the first depression; and   a second IC chip which is disposed in the second depression and which fits the second depression,   wherein the shapes or the sizes of the first IC chip and the second IC chip are different from each other.   
     
     
         15 . A semiconductor device comprising:
 a base including a first depression and a second depression which have different shapes or different sizes;   a first IC chip which is disposed in the first depression and which fits the first depression;   a second IC chip which is disposed in the second depression and which fits the second depression;   a film covering the base, the first IC chip, and the second IC chip; and   a wiring formed over the film, and electrically connected to at least one of the first IC chip and the second IC chip,   wherein the shapes or the sizes of the first IC chip and the second IC chip are different from each other.   
     
     
         16 . The semiconductor device according to  claim 15 ,
 wherein the wiring is formed by a droplet discharging method or a screen printing method.   
     
     
         17 . The semiconductor device according to  claim 15 ,
 wherein the first IC chip is electrically connected to the second IC chip through the wiring.   
     
     
         18 . The semiconductor device according to  claim 14 ,
 wherein the base comprises a resin.   
     
     
         19 . The semiconductor device according to  claim 15 ,
 wherein the base comprises a resin.   
     
     
         20 . The semiconductor device according to  claim 14 ,
 wherein the base comprises a third depression; and   the third depression comprises a protruding portion in the third depression.   
     
     
         21 . The semiconductor device according to  claim 15 ,
 wherein the base comprises a third depression; and   the third depression comprises a protruding portion in the third depression.   
     
     
         22 . The semiconductor device according to  claim 14 ,
 wherein the first IC chip and the second IC chip each are formed by using a silicon substrate, a gallium arsenide substrate, a silicon germanium substrate, an SOI substrate, a quartz substrate, or a glass substrate.   
     
     
         23 . The semiconductor device according to  claim 15 ,
 wherein the first IC chip and the second IC chip each are formed by using a silicon substrate, a gallium arsenide substrate, a silicon germanium substrate, an SOI substrate, a quartz substrate, or a glass substrate.   
     
     
         24 . A manufacturing method of a semiconductor device, comprising:
 forming a plurality of depressions which have different shapes or different sizes in a base; and   disposing IC chips which fit the plurality of depressions into the depressions,   wherein the IC chips are disposed in liquid.   
     
     
         25 . The manufacturing method according to  claim 24 , further comprising:
 forming an antenna in order to electrically connected to at least one IC chip selected from the plurality of IC chips.   
     
     
         26 . A manufacturing method of a semiconductor device, comprising:
 forming a first depression and a second depression which have different shapes or different sizes in a base; and   disposing a first IC chip which fits the first depression into the first depression and a second IC chip which fits the second depression into the second depression,   wherein the shapes or the sizes of the first IC chip and the second IC chip are different from each other, and   wherein the first IC chip and the second IC chip are disposed in liquid.   
     
     
         27 . A manufacturing method of a semiconductor device, comprising:
 forming a plurality of depressions which have different shapes or different sizes in a base;   disposing IC chips which fit the plurality of depressions into the depressions;   forming a film so as to cover the base and the IC chips; and   forming a wiring over the film, said wiring electrically connected to at least one IC chip selected from the plurality of IC chips,   wherein the IC chips are disposed in liquid.   
     
     
         28 . The manufacturing method according to  claim 27  further comprising forming an antenna electrically connected to the wiring. 
     
     
         29 . A manufacturing method of a semiconductor device, comprising:
 forming a first depression and a second depression which have different shapes or different sizes in a base;   disposing a first IC chip which fits the first depression and a second IC chip which fits the second depression in liquid;   forming a film so as to cover the base, the first IC chip, and-the second IC chip; and   forming a wiring electrically connected to the first IC chip or the second IC chip, over the film,   wherein the shapes or the sizes of the first IC chip and the second IC chip are different from each other.   
     
     
         30 . The manufacturing method of a semiconductor device according to  claim 27 ,
 wherein the wiring is formed by a droplet discharging method or a screen printing method.   
     
     
         31 . The manufacturing method of a semiconductor device according to  claim 29 ,
 wherein the wiring is formed by a droplet discharging method or a screen printing method.   
     
     
         32 . A manufacturing method of a semiconductor device, comprising:
 forming a first depression and a second depression in a base, wherein said first depression has a protruding portion; and   disposing an IC chip which fits the second depression, into the second depression,   wherein said IC chip is disposed in liquid.   
     
     
         33 . A manufacturing method of a semiconductor device, comprising:
 forming a first depression and a second depression in a base, wherein said first depression has a protruding portion;   disposing a first IC chip which fits the second depression into the second depression, wherein said first IC chip is disposed in liquid;   removing the protruding portion of the first depression; and   disposing a second IC chip which fits the first depression of which the protruding portion has been removed into the first depression of which the protruding portion is removed.