Semiconductor package

Abstract

A semiconductor package that includes a semiconductor device that is integrated with a silicon substrate.

1 . A semiconductor package, comprising: 
 a silicon substrate having a total area;    a semiconductor device having a total area smaller than said total area of said substrate and at least one active electrode;    a conductive pad electrically and mechanically connected to said at least one active electrode and disposed on said silicon substrate, wherein said conductive pad includes an area for external connection that is larger than said at least one active electrode.    
   
   
       2 . The semiconductor package of  claim 1 , wherein said conductive pad is disposed between said silicon substrate and said semiconductor die.  
   
   
       3 . The semiconductor package of  claim 2 , further comprising an electrically conductive mass disposed on said area for external connection.  
   
   
       4 . The semiconductor package of  claim 3 , wherein said electrically conductive mass includes conductive particles dispersed within a solder matrix.  
   
   
       5 . The semiconductor package of  claim 3 , wherein said electrically conductive mass is a conductive ball.  
   
   
       6 . The semiconductor package of  claim 1 , further comprising a heat spreader thermally coupled to said substrate.  
   
   
       7 . The semiconductor package of  claim 6 , wherein said heat spreader is cup-shaped.  
   
   
       8 . The semiconductor package of  claim 1 , further comprising another conductive pad electrically and mechanically coupled to at least another active electrode.  
   
   
       9 . The semiconductor package of  claim 1 , wherein said semiconductor device is a power semiconductor device.  
   
   
       10 . The semiconductor package of  claim 1 , wherein said semiconductor device is a power MOSFET and said at least one active electrode is the drain electrode of said MOSFET.  
   
   
       11 . The semiconductor package of  claim 1 , wherein said at least one active electrode is electrically and mechanically connected to said conductive pad by a layer of conductive adhesive.  
   
   
       12 . The semiconductor package of  claim 11 , further comprising a passivation body disposed around said conductive adhesive.  
   
   
       13 . The semiconductor package of  claim 12 , wherein said passivation body defines said area for external connection.  
   
   
       14 . The semiconductor package of  claim 11 , wherein said conductive adhesive is either solder or a conductive epoxy.  
   
   
       15 . The semiconductor package of  claim 1 , wherein semiconductor device is disposed within a recess in said substrate and said conductive pad is disposed on a surface of said substrate that is parallel to a surface on which said at least one electrode is disposed.  
   
   
       16 . The semiconductor package of  claim 15 , wherein said conductive pad is generally coplanar with said at least one electrode.  
   
   
       17 . The semiconductor package of  claim 15 , wherein said semiconductor device is an IC.  
   
   
       18 . The semiconductor package of  claim 1 , further comprising passive components disposed on said silicon substrate and operatively coupled to said semiconductor device.  
   
   
       19 . The semiconductor package of  claim 1 , further comprising another semiconductor device disposed on said substrate and operative coupled to said semiconductor device to form an integrated circuit.