Semiconductor device and method for fabricating the same

Abstract

A semiconductor device includes: a gate electrode formed on a silicon substrate; source/drain regions formed at both sides of the gate electrode in the silicon substrate; and a silicide layer formed on the source/drain regions. The silicide layer includes a first silicide layer mainly made of a metal silicide having a formation enthalpy lower than that of NiSi and a second silicide layer formed on the first silicide and made of Ni silicide.

1 . A semiconductor device comprising: 
 a gate electrode formed on a silicon substrate;    source/drain regions formed at both sides of the gate electrode in the silicon substrate; and    a silicide layer formed on the source/drain regions,    wherein the silicide layer includes a first silicide layer mainly made of a metal silicide having a formation enthalpy lower than that of NiSi and a second silicide layer formed on the first silicide layer and made of Ni silicide.    
   
   
       2 . A semiconductor device, comprising: 
 a gate electrode formed on a silicon substrate;    source/drain regions formed at both sides of the gate electrode in the silicon substrate; and    a silicide layer formed on the source/drain regions,    wherein the silicide layer includes a first silicide layer which is an alloy layer made of Ni silicide and a metal silicide having a formation enthalpy lower than that of NiSi and a second silicide layer formed on the first silicide layer and made of Ni silicide.    
   
   
       3 . The semiconductor device of  claim 1 , wherein the metal silicide having a formation enthalpy lower than that of NiSi is a silicide made from a material selected from the group consisting of Hf, Zr, Mo, Ta and V.  
   
   
       4 . The semiconductor device of  claim 2 , wherein the metal silicide having a formation enthalpy lower than that of NiSi is a silicide made from a material selected from the group consisting of Hf, Zr, Mo, Ta and V.  
   
   
       5 - 10 . (canceled)